5秒后页面跳转
CMPT6427 PDF预览

CMPT6427

更新时间: 2024-11-09 22:40:15
品牌 Logo 应用领域
CENTRAL 晶体晶体管达林顿晶体管
页数 文件大小 规格书
2页 81K
描述
NPN SILICON DARLINGTON TRANSISTOR

CMPT6427 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:SOT-23
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.16
最大集电极电流 (IC):0.5 A集电极-发射极最大电压:40 V
配置:DARLINGTON最小直流电流增益 (hFE):20000
JESD-30 代码:R-PDSO-G3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
最大功率耗散 (Abs):0.35 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICON标称过渡频率 (fT):130 MHz
Base Number Matches:1

CMPT6427 数据手册

 浏览型号CMPT6427的Datasheet PDF文件第2页 
TM  
Ce n t r a l  
CMPT6427  
S e m ic o n d u c t o r Co r p .  
NPN SILICON  
DARLINGTON TRANSISTOR  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR  
CMPT6427 type is a NPN Silicon Darlington  
Transistors manufactured by the epitaxial  
planar process, epoxy molded in a surface  
mount package, designed for applications  
requiring extremely high gain.  
Marking Code is C1V.  
SOT-23 CASE  
o
MAXIMUM RATINGS (T =25 C)  
A
SYMBOL  
UNITS  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
V
V
40  
40  
12  
500  
350  
V
V
V
CBO  
CEO  
EBO  
I
P
mA  
mW  
C
Power Dissipation  
D
Operating and Storage  
Junction Temperature  
Thermal Resistance  
o
T ,T  
-65 to +150  
357  
C
C/W  
J stg  
o
Θ
JA  
o
ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
50  
1.0  
50  
UNITS  
I
I
I
V
V
V
=30V  
=25V  
=10V  
nA  
µA  
nA  
V
V
V
V
V
V
V
CBO  
CEO  
EBO  
CBO  
CEO  
EBO  
CE(SAT)  
CE(SAT)  
BE(SAT)  
BE(ON)  
FE  
FE  
FE  
CB  
CE  
BE  
BV  
BV  
BV  
V
V
V
V
h
I =100µA  
40  
40  
12  
C
I =10mA  
C
I =10µA  
E
I =50mA, I =0.5mA  
1.20  
1.50  
2.00  
1.75  
100K  
200K  
140K  
C
B
B
B
C
I =500mA, I =0.5mA  
C
I =500mA, I =0.5mA  
C
V
=5.0V, I =50mA  
CE  
CE  
CE  
CE  
CE  
V
V
V
V
=5.0V, I =10mA  
C
10K  
20K  
14K  
130  
h
h
f
=5.0V, I =100mA  
C
=5.0V, I =500mA  
C
=5.0V, IC=10mA, f=100MHz  
MHz  
T
188  

与CMPT6427相关器件

型号 品牌 获取价格 描述 数据表
CMPT6427_10 CENTRAL

获取价格

SURFACE MOUNT NPN SILICON DARLINGTON TRANSISTOR
CMPT6427BK CENTRAL

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon,
CMPT6427BKLEADFREE CENTRAL

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon,
CMPT6427BKPBFREE CENTRAL

获取价格

Transistor,
CMPT6427LEADFREE CENTRAL

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23,
CMPT6427TR13 CENTRAL

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon,
CMPT6427TR13LEADFREE CENTRAL

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon,
CMPT6427TRLEADFREE CENTRAL

获取价格

Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon,
CMPT6427TRPBFREE CENTRAL

获取价格

暂无描述
CMPT6428 CENTRAL

获取价格

NPN SILICON TRANSISTOR