Datasheet > CMPT5551EBK

CMPT5551EBK

更新时间： 2024-09-21 19:49:23

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CMPT5551EBK 数据手册

CMPT5551E

www.centralsemi.com

ENHANCED SPECIFICATION

SURFACE MOUNT

NPN SILICON TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPT5551E is an

NPN Silicon Transistor, packaged in an SOT-23 case,

designed for general purpose amplifier applications

requiring high breakdown voltage and small space

saving packaging.

MARKING CODE: C555

FEATURES:

• High Collector Breakdown Voltage 250V

• Low Leakage Current 50nA Max

• Low Saturation Voltage 100mV Max @ 50mA

SOT-23 CASE

APPLICATIONS:

• General purpose switching and amplification • Complementary Device CMPT5401E

• Telephone applications

• SOT-23 Surface Mount Package

MAXIMUM RATINGS: (T =25°C)

SYMBOL

UNITS

♦^{Collector-Base Voltage}

250

220

CBO

CEO

Collector-Emitter Voltage

♦

Emitter-Base Voltage

6.0

EBO

Continuous Collector Current

Power Dissipation

600

°C

350

Operating and Storage Junction Temperature

Thermal Resistance

T , T

-65 to +150

357

stg

°C/W

ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

μA

=120V

CBO

EBO

=120V, T =100°C

=4.0V

♦

I =100µA

250

220

6.0

CBO

♦^BV

I =1.0mA

CEO

♦^B^V^VEBO

I =10mA, I =1.0mA

I =10μA

CE(SAT)

♦^V

I =50mA, I =5.0mA

100

1.00

CE(SAT)

BE(SAT)

I =10mA, I =1.0mA

I =50mA, I =5.0mA

♦

=5.0V, I =1.0mA

120

♦^h

=5.0V, I =10mA

300

♦

=5.0V, I =50mA

♦^h

=10V, I =150mA

=10V, I =10mA, f=100MHz

100

300

MHz

♦ Enhanced specification

R1 (1-February 2010)

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