Datasheet > C3D06065E

C3D06065E

更新时间： 2024-10-30 01:24:19

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
6页	1101K
描述
Silicon Carbide Schottky Diode

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中文翻译

获取价格

数据手册

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C3D06065E 数据手册

I ꢀT <135˚Cꢀ=

C3D06065E

V_RRM

650 V

_RRMꢀꢀꢀ=ꢀ650ꢀV

Silicon Carbide Schottky Diode

I (T =135˚C) =

9.5 A

8.6ꢀA

Z-Rec Rectifier

15 nC

_cQ_cꢀ ꢀꢀꢀ=ꢀꢀnC

Features

Package

•ꢀ 650-VoltꢀSchottkyꢀRectiﬁer

•ꢀ ZeroꢀReverseꢀRecoveryꢀCurrent

•ꢀ ZeroꢀForwardꢀRecoveryꢀVoltage

•ꢀ High-FrequencyꢀOperation

•ꢀ Temperature-IndependentꢀSwitchingꢀBehavior

•ꢀ ExtremelyꢀFastꢀSwitching

•ꢀ PositiveꢀTemperatureꢀCoefﬁcientꢀonꢀV_F

TO-252-2

ꢀꢀꢀꢀꢀꢀꢀꢀꢀ

ꢀ

ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ

Beneﬁts

•ꢀ ReplaceꢀBipolarꢀwithꢀUnipolarꢀRectiﬁers

•ꢀ EssentiallyꢀNoꢀSwitchingꢀLosses

•ꢀ HigherꢀEfﬁciency

PINꢀ1

PINꢀ2

•ꢀ ReductionꢀofꢀHeatꢀSinkꢀRequirements

•ꢀ ParallelꢀDevicesꢀWithoutꢀThermalꢀRunaway

CASE

Applications

Part Number

Package

Marking

•ꢀ Switch Mode Power Supplies (SMPS)

•ꢀ Boost diodes in PFC or DC/DC stages

•ꢀ Free Wheeling Diodes in Inverter stages

•ꢀ AC/DC converters

C3D06065E

TO-252-2

C3D06065

Maximum Ratings (T_Cꢀ=ꢀ25˚Cꢀunlessꢀotherwiseꢀspeciﬁed)

Symbol

Parameter

Value Unit

Test Conditions

Note

V_RRM

RepetitiveꢀPeakꢀReverseꢀVoltage

650

V_RSM

SurgeꢀPeakꢀReverseꢀVoltage

DCꢀBlockingꢀVoltage

V_DC

9.5

T_C=25˚C

T_C=135˚C

T_C=157˚C

I_F

ContinuousꢀForwardꢀCurrent

Fig.ꢀ3

T_C=25˚C,ꢀt_Pꢀ=ꢀ10ꢀms,ꢀHalfꢀSineꢀWave

T_C=110˚C,ꢀt_Pꢀ=ꢀ10ꢀms,ꢀHalfꢀSineꢀWave

I_FRM

RepetitiveꢀPeakꢀForwardꢀSurgeꢀCurrent

Non-RepetitiveꢀPeakꢀForwardꢀSurgeꢀCurrent

PowerꢀDissipation

T_C=25˚C,ꢀt_pꢀ=ꢀ10ꢀms,ꢀHalfꢀSineꢀWave

T_C=110˚C,ꢀt_pꢀ=ꢀ10ꢀms,ꢀHalfꢀSineꢀWave

I_FSM

Fig.ꢀ8

Fig.ꢀ4

540

460

T_C=25˚C,ꢀt_Pꢀ=ꢀ10ꢀµs,ꢀPulse

T_C=110˚C,ꢀt_Pꢀ=ꢀ10ꢀµs,ꢀPulse

I_F,Max

100

T_C=25˚C

T_C=110˚C

P_tot

˚C

-55ꢀtoꢀ

+175

T_Jꢀ,ꢀT_stg

OperatingꢀJunctionꢀandꢀStorageꢀTemperature

C3D06065E Rev. A, 01-2016

12 3 4 5 6

中文翻译

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