Datasheet > C3D10065I

C3D10065I

更新时间： 2024-10-30 01:24:31

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
6页	728K
描述
Silicon Carbide Schottky Diode

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中文翻译

获取价格

数据手册

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C3D10065I 数据手册

C3D10065I

V_RRMꢀꢀꢀꢀꢀꢀ=ꢀꢀ ꢀ650ꢀVꢀ

I_F(T_C=125˚C) =ꢀ10ꢀA

Q_cꢀ ꢀꢀ ꢀꢀꢀ=ꢀꢀ ꢀ25ꢀnC

Silicon Carbide Schottky Diode

™

Z-Rec ꢀRectifieR

Features

Package

•ꢀ 650-VoltꢀSchottkyꢀRectiﬁer

•ꢀ CeramicꢀPackageꢀprovidesꢀ2.5kVꢀisolation

•ꢀ ZeroꢀReverseꢀRecoveryꢀCurrent

•ꢀ High-FrequencyꢀOperation

•ꢀ Temperature-IndependentꢀSwitchingꢀBehavior

•ꢀ PositiveꢀTemperatureꢀCoefﬁcientꢀonꢀV_F

ꢀꢀꢀꢀ

ꢀ

ꢀꢀꢀꢀꢀꢀꢀ

Beneﬁts

•ꢀ ElectricallyꢀIsolatedꢀPackage

•ꢀ EssentiallyꢀNoꢀSwitchingꢀLosses

•ꢀ HigherꢀEfﬁciency

PINꢀ1

PINꢀ2

CASE

•ꢀ ReductionꢀofꢀHeatꢀSinkꢀRequirements

•ꢀ ParallelꢀDevicesꢀWithoutꢀThermalꢀRunaway

Applications

•ꢀ HVAC

Part Number

Package

Marking

•ꢀ SwitchꢀModeꢀPowerꢀSuppliesꢀ

ꢀ

C3D10065I

IsolatedꢀTO-220-2

C3D10065I

Maximum Ratings (T_Cꢀ=ꢀ25ꢀ˚Cꢀunlessꢀotherwiseꢀspeciﬁed)

Symbol Parameter

Value

Unit

Test Conditions

Note

V_RRM

V_RSM

V_DC

RepetitiveꢀPeakꢀReverseꢀVoltage

650

SurgeꢀPeakꢀReverseꢀVoltage

DCꢀBlockingꢀVoltage

8.5

T_C=25˚C

T_C=125˚C

T_C=135˚C

I_F

ContinuousꢀForwardꢀCurrent

28.6

17.7

T_C=25˚C,ꢀt_P=10ꢀms,ꢀHalfꢀSineꢀpulseꢀ

T_C=110˚C,ꢀt_P=10ꢀms,ꢀHalfꢀSineꢀpulse

I_FRM

I_FSM

P_tot

T_J

RepetitiveꢀPeakꢀForwardꢀSurgeꢀCurrent

Non-RepetitiveꢀPeakꢀForwardꢀSurgeꢀCurrent

PowerꢀDissipation

T_C=25˚C,ꢀt_P=10ꢀms,ꢀHalfꢀSineꢀpulse

T_C=110˚C,ꢀt_P=10ꢀms,ꢀHalfꢀSineꢀpulse

T_C=25˚C

T_C=110˚C

-55ꢀtoꢀ

+175

OperatingꢀJunctionꢀRange

˚C

-55ꢀtoꢀ

+150

T_stg,ꢀT

StorageꢀTemperatureꢀandꢀCaseꢀTemperature

TO-220ꢀMountingꢀTorque

8.8

lbf-in

M3ꢀScrew

6-32ꢀScrew

C3D10065I Rev. B

12 3 4 5 6

中文翻译

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