Datasheet > C3D16065D

C3D16065D

更新时间： 2024-10-30 01:24:31

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
6页	1037K
描述
Silicon Carbide Schottky Diode

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中文翻译

获取价格

数据手册

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C3D16065D 数据手册

C3D16065D

V_RRM

650 V

Silicon Carbide Schottky Diode

I_F(T_C=135˚C) =ꢀ22ꢀA**

Q_cꢀ ꢀꢀ ꢀꢀꢀ=ꢀꢀ 42ꢀnC**

Z-Rec^®RectifieR

Features

Package

•ꢀ 650-VoltꢀSchottkyꢀRectiﬁer

•ꢀ ZeroꢀReverseꢀRecoveryꢀCurrent

•ꢀ ZeroꢀForwardꢀRecoveryꢀVoltage

•ꢀ High-FrequencyꢀOperation

•ꢀ Temperature-IndependentꢀSwitchingꢀBehavior

•ꢀ ExtremelyꢀFastꢀSwitching

•ꢀ PositiveꢀTemperatureꢀCoefﬁcientꢀonꢀV_F

ꢀꢀꢀꢀꢀTO-274-3ꢀ ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ

Beneﬁts

•ꢀ ReplaceꢀBipolarꢀwithꢀUnipolarꢀRectiﬁers

•ꢀ EssentiallyꢀNoꢀSwitchingꢀLosses

•ꢀ HigherꢀEfﬁciency

•ꢀ ReductionꢀofꢀHeatꢀSinkꢀRequirements

•ꢀ ParallelꢀDevicesꢀWithoutꢀThermalꢀRunaway

Applications

Part Number

Package

Marking

•ꢀ SwitchꢀModeꢀPowerꢀSuppliesꢀ

•ꢀ PowerꢀFactorꢀCorrection

•ꢀ SolarꢀInverters

ꢀ

C3D16065D

TO-247-3

C3D16065

•ꢀ MotorꢀDrives

•ꢀ ElectricꢀVehicleꢀChargerꢀ

ꢀ

ꢀꢀ

Maximum Ratings (T_C=25°Cꢀunlessꢀotherwiseꢀspeciﬁed)

Symbol

Parameter

Value Unit

Test Conditions

Note

V_RRM

RepetitiveꢀPeakꢀReverseꢀVoltage

650

V_RSM

SurgeꢀPeakꢀReverseꢀVoltage

DCꢀBlockingꢀVoltage

V_DC

23/46

11/22

8/16

T_C=25˚C

T_C=135˚C

T_C=150˚C

See

Fig.ꢀ3

I_F

ContinuousꢀForwardꢀCurrentꢀ(PerꢀLeg/Device)

RepetitiveꢀPeakꢀForwardꢀSurgeꢀCurrentꢀ

(PerꢀLeg/Device)

57/114

36/72

T_C=25˚C,ꢀt_P=ꢀ10ꢀms,ꢀHalfꢀSineꢀWave,ꢀD=0.3

T_C=110˚C,ꢀt_P=10ꢀms,ꢀHalfꢀSineꢀWave,ꢀD=0.3

I_FRM

I_FSM

Non-RepetitiveꢀPeakꢀForwardꢀSurgeꢀCurrent

(PerꢀLeg/Device)

80/160

60/120

T_C=25˚C,ꢀt_pꢀ=ꢀ10ꢀmS,ꢀHalfꢀSineꢀWave,ꢀD=0.3

T_C=110˚C,ꢀt_P=10ꢀms,ꢀHalfꢀSineꢀWave,ꢀD=0.3

Non-RepetitiveꢀPeakꢀForwardꢀSurgeꢀCurrent

(PerꢀLeg/Device)

I_FSM

220/440

T_C=25˚C,ꢀt_P= 10 µs,ꢀPulse

100

T_C=25˚C

T_C=110˚C

P_tot

PowerꢀDissipationꢀ(PerꢀLeg)

˚C

-55 to

+175

T_Jꢀ,ꢀT_stg

OperatingꢀJunctionꢀandꢀStorageꢀTemperature

8.8

lbf-in

M3ꢀScrew

6-32ꢀScrew

TO-247ꢀMountingꢀTorque

^*ꢀPerꢀLeg,ꢀ^**ꢀPerꢀDevice

C3D16065D Rev. -

12 3 4 5 6

中文翻译

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