Datasheet > C3D16060D

C3D16060D

更新时间： 2024-10-30 01:22:39

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科锐 - CREE		/
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描述
Silicon Carbide Schottky Diode

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中文翻译

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数据手册

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C3D16060D 数据手册

C3D16060D

V_RRM

600 V

Silicon Carbide Schottky Diode

I_F(T_C=135˚C) =ꢀ22ꢀA**

Q_cꢀ ꢀꢀ ꢀꢀꢀ=ꢀꢀ 42ꢀnC**

™

Z-Rec RectifieR

Features

Package

•ꢀ 600-VoltꢀSchottkyꢀRectiﬁer

•ꢀ ZeroꢀReverseꢀRecoveryꢀCurrent

•ꢀ ZeroꢀForwardꢀRecoveryꢀVoltage

•ꢀ High-FrequencyꢀOperation

•ꢀ Temperature-IndependentꢀSwitchingꢀBehavior

•ꢀ ExtremelyꢀFastꢀSwitching

•ꢀ PositiveꢀTemperatureꢀCoefﬁcientꢀonꢀV_F

ꢀꢀꢀꢀꢀTO-274-3ꢀ ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ

Beneﬁts

•ꢀ ReplaceꢀBipolarꢀwithꢀUnipolarꢀRectiﬁers

•ꢀ EssentiallyꢀNoꢀSwitchingꢀLosses

•ꢀ HigherꢀEfﬁciency

•ꢀ ReductionꢀofꢀHeatꢀSinkꢀRequirements

•ꢀ ParallelꢀDevicesꢀWithoutꢀThermalꢀRunaway

Applications

Part Number

Package

Marking

•ꢀ SwitchꢀModeꢀPowerꢀSuppliesꢀ

•ꢀ PowerꢀFactorꢀCorrection

•ꢀ SolarꢀInverters

ꢀ

C3D16060D

TO-247-3

C3D16060

•ꢀ MotorꢀDrives

•ꢀ ElectricꢀVehicleꢀChargerꢀ

ꢀ

ꢀꢀ

Maximum Ratings (T_C=25°Cꢀunlessꢀotherwiseꢀspeciﬁed)

Symbol

V_RRM

Parameter

RepetitiveꢀPeakꢀReverseꢀVoltage

SurgeꢀPeakꢀReverseꢀVoltage

DCꢀBlockingꢀVoltage

Value Unit

Test Conditions

Note

600

V_RSM

V_DC

23/46

11/22

8/16

T_C=25˚C

T_C=135˚C

T_C=150˚C

See

Fig.ꢀ3

I_F

ContinuousꢀForwardꢀCurrentꢀ(PerꢀLeg/Device)

RepetitiveꢀPeakꢀForwardꢀSurgeꢀCurrentꢀ

(PerꢀLeg/Device)

57/114

36/72

T_C=25˚C,ꢀt_P=ꢀ10ꢀms,ꢀHalfꢀSineꢀWave,ꢀD=0.3

T_C=110˚C,ꢀt_P=10ꢀms,ꢀHalfꢀSineꢀWave,ꢀD=0.3

I_FRM

I_FSM

Non-RepetitiveꢀPeakꢀForwardꢀSurgeꢀCurrent

(PerꢀLeg/Device)

80/160

60/120

T_C=25˚C,ꢀt_pꢀ=ꢀ10ꢀmS,ꢀHalfꢀSineꢀWave,ꢀD=0.3

T_C=110˚C,ꢀt_P=10ꢀms,ꢀHalfꢀSineꢀWave,ꢀD=0.3

Non-RepetitiveꢀPeakꢀForwardꢀSurgeꢀCurrent

(PerꢀLeg/Device)

I_FSM

P_tot

220/440

T_C=25˚C,ꢀt_P= 10 µs,ꢀPulse

100*

43*

T_C=25˚C

T_C=110˚C

PowerꢀDissipationꢀ(PerꢀLeg)

˚C

-55ꢀtoꢀ

+175

T_Jꢀ,ꢀT_stg

OperatingꢀJunctionꢀandꢀStorageꢀTemperature

TO-247ꢀMountingꢀTorque

8.8

lbf-in

M3ꢀScrew

6-32ꢀScrew

^*ꢀPerꢀLeg,ꢀ^**ꢀPerꢀDevice

C3D16060D Rev. A

12 3 4 5 6

中文翻译

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