Datasheet > C3D10065I_16

C3D10065I_16

更新时间： 2024-10-30 01:24:19

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
6页	948K
描述
Silicon Carbide Schottky Diode

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中文翻译

获取价格

数据手册

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C3D10065I_16 数据手册

C3D10065I

V_RRM

650 V

10 A

Silicon Carbide Schottky Diode

I_F(T_C=125˚C)

Z-Rec Rectifier

Q_c

24 nC

Features

Package

•ꢀ 650-VoltꢀSchottkyꢀRectiﬁer

•ꢀ CeramicꢀPackageꢀProvidesꢀ2.5kVꢀIsolation

•ꢀ ZeroꢀReverseꢀRecoveryꢀCurrent

•ꢀ High-FrequencyꢀOperation

•ꢀ Temperature-IndependentꢀSwitchingꢀBehavior

•ꢀ PositiveꢀTemperatureꢀCoefﬁcientꢀonꢀV_F

ꢀ

TO-220ꢀIsolated

ꢀꢀ

Beneﬁts

•ꢀ ElectricallyꢀIsolatedꢀPackage

•ꢀ EssentiallyꢀNoꢀSwitchingꢀLosses

•ꢀ HigherꢀEfﬁciency

PINꢀ1

PINꢀ2

CASE

•ꢀ ReductionꢀofꢀHeatꢀSinkꢀRequirements

•ꢀ ParallelꢀDevicesꢀWithoutꢀThermalꢀRunaway

Applications

Part Number

Package

Marking

•ꢀ HVAC

•ꢀ SwitchꢀModeꢀPowerꢀSuppliesꢀ(SMPS)

•ꢀ BoostꢀdiodesꢀinꢀPFCꢀorꢀDC/DCꢀstages

•ꢀ FreeꢀWheelingꢀDiodesꢀinꢀInverterꢀStagesꢀ

•ꢀ AC/DCꢀconverters

C3D10065I

IsolatedꢀTO-220-2

C3D10065I

ꢀ

ꢀꢀ

Maximum Ratings (T_Cꢀ=ꢀ25˚Cꢀunlessꢀotherwiseꢀspeciﬁed)

Symbol Parameter

Value

650

Unit

Test Conditions

Note

V_RRM

V_RSM

V_DC

RepetitiveꢀPeakꢀReverseꢀVoltage

SurgeꢀPeakꢀReverseꢀVoltage

DCꢀBlockingꢀVoltage

650

T_C=25˚C

T_C=125˚C

T_C=135˚C

I_F

ContinuousꢀForwardꢀCurrent

ꢀFig.ꢀ3

T_C=25˚C,ꢀt_P=10ꢀms,ꢀHalfꢀSineꢀWave,ꢀD=0.3

T_C=110˚C,ꢀt_P=10ꢀms,ꢀHalfꢀSineꢀWave,ꢀD=0.3

I_FRM

RepetitiveꢀPeakꢀForwardꢀSurgeꢀCurrent

Non-RepetitiveꢀPeakꢀForwardꢀSurgeꢀCurrent

PowerꢀDissipation

T_C=25˚C,ꢀt_P=10ms,ꢀHalfꢀSineꢀWave,ꢀD=0.3

T_C=110˚C,ꢀt_P=10ꢀms,ꢀHalfꢀSineꢀWave,ꢀD=0.3

I_FSM

860

680

T_C=25˚C,ꢀt_Pꢀ=ꢀ10ꢀµs,ꢀPulse

T_C=110˚C,ꢀt_Pꢀ=ꢀ10ꢀµs,ꢀPulse

I_F,Max

T_C=25˚C

T_C=110˚C

P_tot

˚C

Fig.ꢀ4

-55ꢀtoꢀ

+175

T_Jꢀ,ꢀT_stg

OperatingꢀJunctionꢀandꢀStorageꢀTemperature

TO-220ꢀMountingꢀTorque

8.8

lbf-in

M3ꢀScrew

6-32ꢀScrew

C3D10065I Rev. D, 01-2016

12 3 4 5 6

中文翻译

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