Datasheet > C3D08065A

C3D08065A

更新时间： 2024-10-29 09:48:23

品牌	Logo	应用领域
科锐 - CREE		肖特基二极管
页数	文件大小	规格书
6页	463K
描述
Silicon Carbide Schottky Diode

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中文翻译

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数据手册

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C3D08065A 数据手册

C3D08065A–Silicon Carbide Schottky Diode

Z-Rec RectifieR

V_RRM= 650 V

I_F(AVG)= 8 A

™

Q_c

= 21 nC

Features

Package

•ꢀ 650-VoltꢀSchottkyꢀRectiﬁer

•ꢀ ZeroꢀReverseꢀRecoveryꢀCurrent

•ꢀ ZeroꢀForwardꢀRecoveryꢀVoltage

•ꢀ High-FrequencyꢀOperation

•ꢀ Temperature-IndependentꢀSwitchingꢀBehavior

•ꢀ ExtremelyꢀFastꢀSwitching

•ꢀ PositiveꢀTemperatureꢀCoefﬁcientꢀonꢀV_F

ꢀꢀꢀꢀꢀTO-220-2ꢀ ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ

Beneﬁts

•ꢀ ReplaceꢀBipolarꢀwithꢀUnipolarꢀRectiﬁers

•ꢀ EssentiallyꢀNoꢀSwitchingꢀLosses

•ꢀ HigherꢀEfﬁciency

PINꢀ1

PINꢀ2

CASE

•ꢀ ReductionꢀofꢀHeatꢀSinkꢀRequirements

•ꢀ ParallelꢀDevicesꢀWithoutꢀThermalꢀRunaway

Applications

Part Number

Package

Marking

C3D08065

•ꢀ SwitchꢀModeꢀPowerꢀSuppliesꢀ

•ꢀ PowerꢀFactorꢀCorrection

ꢀ

C3D08065A

TO-220-2

-ꢀTypicalꢀPFCꢀP_outꢀ:ꢀ800W-1600W

•^ꢀꢀ MotorꢀDrives

ꢀ

-ꢀTypicalꢀPowerꢀꢀꢀ:ꢀ3HP-4HPꢀ

ꢀꢀ

Maximum Ratings

Symbol

Parameter

Value Unit

Test Conditions

Note

V_RRM

V_RSM

V_DC

RepetitiveꢀPeakꢀReverseꢀVoltage

SurgeꢀPeakꢀReverseꢀVoltage

DCꢀBlockingꢀVoltage

650

I_F(AVG)

AverageꢀForwardꢀCurrent

T_C=150˚C,ꢀDC

T_C=25˚C,ꢀt_P=ꢀ10ꢀms,ꢀHalfꢀSineꢀWave,ꢀD=0.3

T_C=110˚C,ꢀt_P=10ꢀms,ꢀHalfꢀSineꢀWave,ꢀD=0.3

I_FRM

I_FSM

RepetitiveꢀPeakꢀForwardꢀSurgeꢀCurrent

T_C=25˚C,ꢀt_pꢀ=ꢀ10ꢀmS,ꢀHalfꢀSineꢀWave,ꢀD=0.3

T_C=110˚C,ꢀt_P=10ꢀms,ꢀHalfꢀSineꢀWave,ꢀD=0.3

Non-RepetitiveꢀPeakꢀForwardꢀSurgeꢀCurrent

PowerꢀDissipation

I_FSM

220

T_C=25˚C,ꢀt_P= 10 µs,ꢀPulse

100

T_C=25˚C

T_C=110˚C

P_tot

-55 to

+175

T_Jꢀ,ꢀT_stg

OperatingꢀJunctionꢀandꢀStorageꢀTemperature

TO-220ꢀMountingꢀTorque

˚C

8.8

lbf-in

M3ꢀScrew

6-32ꢀScrew

Subject to change without notice.

www.cree.com

12 3 4 5 6

中文翻译

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