Datasheet > C3D10065E

C3D10065E

更新时间： 2024-10-30 01:24:19

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
6页	1092K
描述
Silicon Carbide Schottky Diode

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中文翻译

获取价格

数据手册

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C3D10065E 数据手册

C3D10065E

V_RRM

650 V

15 A

Silicon Carbide Schottky Diode

I_F(T_C=135˚C) =

Z-Rec Rectifier

Q_c

24 nC

Features

Package

•ꢀ 650-VoltꢀSchottkyꢀRectiﬁer

•ꢀ ZeroꢀReverseꢀRecoveryꢀCurrent

•ꢀ ZeroꢀForwardꢀRecoveryꢀVoltage

•ꢀ High-FrequencyꢀOperation

•ꢀ Temperature-IndependentꢀSwitchingꢀBehavior

•ꢀ ExtremelyꢀFastꢀSwitching

•ꢀ PositiveꢀTemperatureꢀCoefﬁcientꢀonꢀV_F

TO-252-2

ꢀꢀꢀꢀ

Beneﬁts

•ꢀ ReplaceꢀBipolarꢀwithꢀUnipolarꢀRectiﬁers

•ꢀ EssentiallyꢀNoꢀSwitchingꢀLosses

•ꢀ HigherꢀEfﬁciency

PINꢀ1

PINꢀ2

•ꢀ ReductionꢀofꢀHeatꢀSinkꢀRequirements

•ꢀ ParallelꢀDevicesꢀWithoutꢀThermalꢀRunaway

CASE

Applications

Part Number

Package

Marking

•ꢀ SwitchꢀModeꢀPowerꢀSuppliesꢀ

•ꢀ PowerꢀFactorꢀCorrection

•ꢀ MotorꢀDrives

ꢀ

C3D10065E

TO-252-2

C3D10065

ꢀ

ꢀꢀ

Maximum Ratings (T_Cꢀ=ꢀ25˚Cꢀunlessꢀotherwiseꢀspeciﬁed)

Symbol

V_RRM

Parameter

RepetitiveꢀPeakꢀReverseꢀVoltage

SurgeꢀPeakꢀReverseꢀVoltage

DCꢀBlockingꢀVoltage

Value Unit

Test Conditions

Note

650

V_RSM

V_DC

T_C=25˚C

T_C=135˚C

T_C=153˚C

I_F

ContinuousꢀForwardꢀCurrent

Fig.ꢀ3

43.5

T_C=25˚C,ꢀt_Pꢀ=ꢀ10ꢀms,ꢀHalfꢀSineꢀWave

T_C=110˚C,ꢀt_P=10ꢀms,ꢀHalfꢀSineꢀWave

I_FRM

RepetitiveꢀPeakꢀForwardꢀSurgeꢀCurrent

Non-RepetitiveꢀPeakꢀForwardꢀSurgeꢀCurrent

PowerꢀDissipation

T_C=25˚C,ꢀt_pꢀ=ꢀ10ꢀms,ꢀHalfꢀSineꢀWave

T_C=110˚C,ꢀt_pꢀ=ꢀ10ꢀms,ꢀHalfꢀSineꢀWave

I_FSM

Fig.ꢀ8

Fig.ꢀ4

860

680

T_C=25˚C,ꢀt_Pꢀ=ꢀ10ꢀµs,ꢀPulse

T_C=110˚C,ꢀt_Pꢀ=ꢀ10ꢀµs,ꢀPulse

I_F,Max

150

T_C=25˚C

T_C=110˚C

P_tot

˚C

-55ꢀtoꢀ

+175

T_Jꢀ,ꢀT_stg

OperatingꢀJunctionꢀandꢀStorageꢀTemperature

C3D10065E Rev. A, 10-2015

12 3 4 5 6

中文翻译

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