Datasheet > C3D10060G_14

C3D10060G_14

更新时间： 2024-10-30 01:24:19

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
6页	661K
描述
Silicon Carbide Schottky Diode

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中文翻译

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数据手册

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C3D10060G_14 数据手册

C3D10060G

V_RRM

600 V

Silicon Carbide Schottky Diode

I_F(T_C=135˚C) =ꢀ14ꢀA

Q_cꢀ ꢀꢀ ꢀꢀꢀ=ꢀꢀꢀ 25ꢀnC

Z-Rec^®RectifieR

Features

Package

•ꢀ 600-VoltꢀSchottkyꢀRectiﬁer

•ꢀ ZeroꢀReverseꢀRecoveryꢀCurrent

•ꢀ ZeroꢀForwardꢀRecoveryꢀVoltage

•ꢀ High-FrequencyꢀOperation

•ꢀ Temperature-IndependentꢀSwitchingꢀBehavior

•ꢀ ExtremelyꢀFastꢀSwitching

•ꢀ PositiveꢀTemperatureꢀCoefﬁcientꢀonꢀV_F

ꢀꢀꢀꢀTO-263-2ꢀ ꢀꢀꢀꢀꢀꢀꢀꢀ

Beneﬁts

•ꢀ ReplaceꢀBipolarꢀwithꢀUnipolarꢀRectiﬁers

•ꢀ EssentiallyꢀNoꢀSwitchingꢀLosses

•ꢀ HigherꢀEfﬁciency

PINꢀ1

PINꢀ2

CASE

•ꢀ ReductionꢀofꢀHeatꢀSinkꢀRequirements

•ꢀ ParallelꢀDevicesꢀWithoutꢀThermalꢀRunaway

•ꢀ AEC-Q101ꢀQualiﬁedꢀandꢀPPAPꢀCapable

Applications

Part Number

Package

Marking

•ꢀ SwitchꢀModeꢀPowerꢀSuppliesꢀ

•ꢀ PowerꢀFactorꢀCorrection

ꢀ

C3D10060G

TO-263-2

C3D10060

-ꢀTypicalꢀPFCꢀP_outꢀ:ꢀ1000W-2000W

•^ꢀꢀ MotorꢀDrives

ꢀ

-ꢀTypicalꢀPowerꢀꢀꢀ:ꢀ3HP-5HPꢀ

ꢀꢀ

Maximum Ratings (T_Cꢀ=ꢀ25ꢀ˚Cꢀunlessꢀotherwiseꢀspeciﬁed)

Symbol

Parameter

Value Unit

Test Conditions

Note

V_RRM

V_RSM

V_DC

RepetitiveꢀPeakꢀReverseꢀVoltage

SurgeꢀPeakꢀReverseꢀVoltage

DCꢀBlockingꢀVoltage

600

29.5

T_C=25˚C

T_C=135˚C

T_C=152˚C

I_F

ContinuousꢀForwardꢀCurrent

T_C=25˚C,ꢀt_P=10ꢀms,ꢀHalfꢀSineꢀWave,ꢀD=0.3

T_C=110˚C,ꢀt_P=10ꢀms,ꢀHalfꢀSineꢀWave,ꢀD=0.3

I_FRM

RepetitiveꢀPeakꢀForwardꢀSurgeꢀCurrent

T_C=25˚C,ꢀt_P=10ms,ꢀHalfꢀSineꢀWave,ꢀD=0.3

T_C=110˚C,ꢀt_P=10ꢀms,ꢀHalfꢀSineꢀWave,ꢀD=0.3

I_FSM

P_tot

Non-RepetitiveꢀPeakꢀForwardꢀSurgeꢀCurrent

PowerꢀDissipation

250

T_C=25˚C,ꢀt_P=10ꢀµs,ꢀPulse

136

T_C=25˚C

T_C=110˚C

-55ꢀtoꢀ

+175

T_Jꢀ,ꢀT_stg

OperatingꢀJunctionꢀandꢀStorageꢀTemperature

˚C

C3D10060G Rev. F

12 3 4 5 6

中文翻译

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