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C3D08065E PDF预览

C3D08065E

更新时间: 2024-10-30 01:24:19
品牌 Logo 应用领域
科锐 - CREE /
页数 文件大小 规格书
6页 1110K
描述
Silicon Carbide Schottky Diode

C3D08065E 数据手册

 浏览型号C3D08065E的Datasheet PDF文件第2页浏览型号C3D08065E的Datasheet PDF文件第3页浏览型号C3D08065E的Datasheet PDF文件第4页浏览型号C3D08065E的Datasheet PDF文件第5页浏览型号C3D08065E的Datasheet PDF文件第6页 
C3D08065E  
VRRM  
=
650 V  
12 A  
Silicon Carbide Schottky Diode  
IF (TC=135˚C) =  
®
Z-Rec Rectifier  
Qc  
=
20 nC  
Features  
Package  
•ꢀ 650-VoltꢀSchottkyꢀRectifier  
•ꢀ ZeroꢀReverseꢀRecoveryꢀCurrent  
•ꢀ ZeroꢀForwardꢀRecoveryꢀVoltage  
•ꢀ High-FrequencyꢀOperation  
•ꢀ Temperature-IndependentꢀSwitchingꢀBehavior  
•ꢀ ExtremelyꢀFastꢀSwitching  
•ꢀ PositiveꢀTemperatureꢀCoefficientꢀonꢀVF  
TO-252-2  
ꢀꢀꢀꢀꢀ  
Benefits  
•ꢀ ReplaceꢀBipolarꢀwithꢀUnipolarꢀRectifiers  
•ꢀ EssentiallyꢀNoꢀSwitchingꢀLosses  
•ꢀ HigherꢀEfficiency  
PINꢀ1  
PINꢀ2  
•ꢀ ReductionꢀofꢀHeatꢀSinkꢀRequirements  
•ꢀ ParallelꢀDevicesꢀWithoutꢀThermalꢀRunaway  
CASE  
Applications  
Part Number  
Package  
Marking  
•ꢀ SwitchꢀModeꢀPowerꢀSuppliesꢀ  
•ꢀ PowerꢀFactorꢀCorrection  
•ꢀ MotorꢀDrives  
C3D08065E  
TO-252-2  
C3D08065  
ꢀꢀ  
Maximum Ratings (TCꢀ=ꢀ25˚Cꢀunlessꢀotherwiseꢀspecified)  
Symbol  
Parameter  
Value Unit  
Test Conditions  
Note  
VRRM  
RepetitiveꢀPeakꢀReverseꢀVoltage  
650  
650  
650  
V
V
V
VRSM  
SurgeꢀPeakꢀReverseꢀVoltage  
DCꢀBlockingꢀVoltage  
VDC  
25.5  
12  
8
TC=25˚C  
TC=135˚C  
TC=155˚C  
IF  
ContinuousꢀForwardꢀCurrent  
Fig.ꢀ3  
A
34  
25  
TC=25˚C,ꢀtPꢀ=ꢀ10ꢀms,ꢀHalfꢀSineꢀWave  
TC=110˚C,ꢀtPꢀ=ꢀ10ꢀms,ꢀHalfꢀSineꢀWave  
IFRM  
IFSM  
RepetitiveꢀPeakꢀForwardꢀSurgeꢀCurrent  
Non-RepetitiveꢀPeakꢀForwardꢀSurgeꢀCurrent  
Non-RepetitiveꢀPeakꢀForwardꢀSurgeꢀCurrent  
PowerꢀDissipation  
A
A
71  
60  
TC=25˚C,ꢀtpꢀ=ꢀ10ꢀms,ꢀHalfꢀSineꢀWave  
TC=110˚C,ꢀtpꢀ=ꢀ10ꢀms,ꢀHalfꢀSineꢀWave  
Fig.ꢀ8  
Fig.ꢀ8  
Fig.ꢀ4  
650  
530  
TC=25˚C,ꢀtPꢀ=ꢀ10ꢀµs,ꢀPulse  
TC=110˚C,ꢀtPꢀ=ꢀ10ꢀµs,ꢀPulse  
IF,Max  
A
120  
52  
TC=25˚C  
TC=110˚C  
Ptot  
W
˚C  
-55ꢀtoꢀ  
+175  
TJꢀ,ꢀTstg  
OperatingꢀJunctionꢀandꢀStorageꢀTemperature  
1
C3D08065E Rev. A, 12-2015  

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