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C3D06065I PDF预览

C3D06065I

更新时间: 2024-10-30 01:24:19
品牌 Logo 应用领域
科锐 - CREE /
页数 文件大小 规格书
6页 945K
描述
Silicon Carbide Schottky Diode

C3D06065I 数据手册

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C3D06065I  
VRRM  
=
650 V  
6 A  
Silicon Carbide Schottky Diode  
IF (TC=135˚C) =  
®
Z-Rec Rectifier  
Qc  
=
15 nC  
Features  
Package  
•ꢀ 650-VoltꢀSchottkyꢀRectifier  
•ꢀ CeramicꢀPackageꢀProvidesꢀ2.5kVꢀIsolation  
•ꢀ ZeroꢀReverseꢀRecoveryꢀCurrent  
•ꢀ High-FrequencyꢀOperation  
•ꢀ Temperature-IndependentꢀSwitchingꢀBehavior  
•ꢀ PositiveꢀTemperatureꢀCoefficientꢀonꢀVF  
TO-220ꢀIsolated  
ꢀꢀꢀꢀꢀꢀꢀ  
Benefits  
•ꢀ ElectricallyꢀIsolatedꢀPackage  
•ꢀ EssentiallyꢀNoꢀSwitchingꢀLosses  
•ꢀ HigherꢀEfficiency  
PINꢀ1  
PINꢀ2  
•ꢀ ReductionꢀofꢀHeatꢀSinkꢀRequirements  
•ꢀ ParallelꢀDevicesꢀWithoutꢀThermalꢀRunaway  
Applications  
Part Number  
Package  
Marking  
•ꢀ SwitchꢀModeꢀPowerꢀSuppliesꢀ(SMPS)  
•ꢀ BoostꢀdiodesꢀinꢀPFCꢀorꢀDC/DCꢀstages  
C3D06065I  
IsolatedꢀTO-220-2  
C3D06065I  
•ꢀ FreeꢀWheelingꢀDiodesꢀinꢀInverterꢀStagesꢀ  
•ꢀ AC/DCꢀconverters  
Maximum Ratings (TCꢀ=ꢀ25˚Cꢀunlessꢀotherwiseꢀspecified)  
Symbol Parameter  
Value  
650  
Unit  
V
Test Conditions  
Note  
VRRM  
VRSM  
VDC  
RepetitiveꢀPeakꢀReverseꢀVoltage  
SurgeꢀPeakꢀReverseꢀVoltage  
650  
V
DCꢀBlockingꢀVoltage  
650  
V
13  
6
TC=25˚C  
TC=135˚C  
IF  
ContinuousꢀForwardꢀCurrent  
A
ꢀFig.ꢀ3  
24  
16  
TC=25˚C,ꢀtPꢀ=ꢀ10ꢀms,ꢀHalfꢀSineꢀWave  
TC=110˚C,ꢀtPꢀ=ꢀ10ꢀms,ꢀHalfꢀSineꢀWave  
IFRM  
RepetitiveꢀPeakꢀForwardꢀSurgeꢀCurrent  
Non-RepetitiveꢀPeakꢀForwardꢀSurgeꢀCurrent  
Non-RepetitiveꢀPeakꢀForwardꢀSurgeꢀCurrent  
PowerꢀDissipation  
A
63  
49  
TC=25˚C,ꢀtpꢀ=ꢀ10ꢀms,ꢀHalfꢀSineꢀWave  
TC=110˚C,ꢀtpꢀ=ꢀ10ꢀms,ꢀHalfꢀSineꢀWave  
IFSM  
A
Fig.ꢀ8  
Fig.ꢀ8  
Fig.ꢀ4  
540  
460  
TC=25˚C,ꢀtPꢀ=ꢀ10ꢀµs,ꢀPulse  
TC=110˚C,ꢀtPꢀ=ꢀ10ꢀµs,ꢀPulse  
IF,Max  
A
45.5  
19.5  
TC=25˚C  
TC=110˚C  
Ptot  
W
˚C  
-55ꢀtoꢀ  
+175  
TJꢀ,ꢀTstg  
OperatingꢀJunctionꢀandꢀStorageꢀTemperature  
TO-220ꢀMountingꢀTorque  
1
8.8  
Nm  
lbf-in  
M3ꢀScrew  
6-32ꢀScrew  
1
C3D06065I Rev. B, 01-2016  

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