Datasheet > C3D08060G_16

C3D08060G_16

更新时间： 2024-10-30 01:24:19

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科锐 - CREE		/
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描述
Silicon Carbide Schottky Diode

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中文翻译

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数据手册

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C3D08060G_16 数据手册

C3D08060G

V_RRM

600 V

11 A

Silicon Carbide Schottky Diode

I_F(T_C=135˚C) =

Z-Rec Rectifier

Q_c

21 nC

Features

Package

•ꢀ 600-VoltꢀSchottkyꢀRectiﬁer

•ꢀ ZeroꢀReverseꢀRecoveryꢀCurrent

•ꢀ ZeroꢀForwardꢀRecoveryꢀVoltage

•ꢀ High-FrequencyꢀOperation

•ꢀ Temperature-IndependentꢀSwitchingꢀBehavior

•ꢀ ExtremelyꢀFastꢀSwitching

•ꢀ PositiveꢀTemperatureꢀCoefﬁcientꢀonꢀV_F

ꢀꢀꢀꢀꢀTO-263-2ꢀ ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ

Beneﬁts

•ꢀ ReplaceꢀBipolarꢀwithꢀUnipolarꢀRectiﬁers

•ꢀ EssentiallyꢀNoꢀSwitchingꢀLosses

•ꢀ HigherꢀEfﬁciency

PINꢀ1

PINꢀ2

•ꢀ ReductionꢀofꢀHeatꢀSinkꢀRequirements

•ꢀ ParallelꢀDevicesꢀWithoutꢀThermalꢀRunaway

CASE

Applications

•ꢀ SwitchꢀModeꢀPowerꢀSuppliesꢀ(SMPS)ꢀ

•ꢀ BoostꢀdiodesꢀinꢀPFCꢀorꢀDC/DCꢀstages

•ꢀ FreeꢀWheelingꢀDiodesꢀinꢀInverterꢀstages

•ꢀ AC/DCꢀconverters

Part Number

Package

Marking

C3D08060G

TO-263-2

C3D08060

ꢀ

ꢀꢀ

Maximum Ratings (T_Cꢀ=ꢀ25ꢀ˚Cꢀunlessꢀotherwiseꢀspeciﬁed)

Symbol

Parameter

Value Unit

Test Conditions

Note

V_RRM

RepetitiveꢀPeakꢀReverseꢀVoltage

600

V_RSM

SurgeꢀPeakꢀReverseꢀVoltage

DCꢀBlockingꢀVoltage

V_DC

T_C=25˚C

T_C=135˚C

T_C=152˚C

I_F

ContinuousꢀForwardꢀCurrent

Fig.ꢀ3

37.5

25.5

T_C=25˚C,ꢀt_Pꢀ=ꢀ10ꢀms,ꢀHalfꢀSineꢀWave

T_C=110˚C,ꢀt_P=10ꢀms,ꢀHalfꢀSineꢀWave

I_FRM

RepetitiveꢀPeakꢀForwardꢀSurgeꢀCurrent

Non-RepetitiveꢀPeakꢀForwardꢀSurgeꢀCurrent

PowerꢀDissipation

T_C=25˚C,ꢀt_pꢀ=ꢀ10ꢀmS,ꢀHalfꢀSineꢀWave

T_C=110˚C,ꢀt_P=10ꢀms,ꢀHalfꢀSineꢀWave

I_FSM

Fig.ꢀ8

Fig.ꢀ4

650

530

T_C=25˚C,ꢀt_Pꢀ=ꢀ10ꢀµs,ꢀPulse

T_C=110˚C,ꢀt_Pꢀ=ꢀ10ꢀµs,ꢀPulse

I_FSM

107

46.5

T_C=25˚C

T_C=110˚C

P_tot

˚C

-55ꢀtoꢀ

+175

T_Jꢀ,ꢀT_stg

OperatingꢀJunctionꢀandꢀStorageꢀTemperature

C3D08060G Rev. G, 01-2016

12 3 4 5 6

中文翻译

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