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BUK78150-55A PDF预览

BUK78150-55A

更新时间: 2024-11-10 22:50:23
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
13页 277K
描述
TrenchMOS standard level FET

BUK78150-55A 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SC-73
包装说明:PLASTIC, SC-73, 4 PIN针数:4
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.17雪崩能效等级(Eas):25 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:55 V最大漏极电流 (Abs) (ID):5.5 A
最大漏极电流 (ID):5.5 A最大漏源导通电阻:0.15 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G4
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:4
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):8 W
最大脉冲漏极电流 (IDM):22 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

BUK78150-55A 数据手册

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BUK78150-55A  
TrenchMOS™ standard level FET  
Rev. 01 — 30 January 2001  
Product specification  
M3D087  
1. Description  
N-channel enhancement mode field-effect power transistor in a plastic package using  
TrenchMOS™1 technology, featuring very low on-state resistance.  
Product availability:  
BUK78150-55A in SOT223 (SC-73).  
2. Features  
TrenchMOS™ technology  
Q101 compliant  
150 °C rated  
Standard level compatible.  
3. Applications  
Automotive and general purpose power switching:  
12 V and 24 V loads  
c
c
Motors, lamps and solenoids.  
4. Pinning information  
Table 1: Pinning - SOT223 (SC-73), simplified outline and symbol  
Pin  
1
Description  
gate (g)  
Simplified outline  
Symbol  
4
d
s
2
drain (d)  
3
source (s)  
drain (d)  
g
4
1
2
3
MBB076  
MSB002 - 1  
Top view  
SOT223 (SC-73)  
1. TrenchMOS is a trademark of Royal Philips Electronics.  

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