PHT6N06LT

更新时间： 2024-11-10 22:20:27

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管开关脉冲光电二极管
页数	文件大小	规格书
9页	71K
描述
TrenchMOS transistor Logic level FET

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中文翻译

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数据手册
替代型号

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PHT6N06LT 数据手册

Philips Semiconductors

Product specification

TrenchMOS transistor

Logic level FET

PHT6N06LT

GENERAL DESCRIPTION

QUICK REFERENCE DATA

N-channel enhancement mode

logic level field-effect power

SYMBOL PARAMETER

MAX.

UNIT

transistor in a plastic envelope

suitable for surface mounting.

The device features very low

on-state resistance and has

integral zener diodes giving

ESDprotection. Itisintendedfor

use in DC-DC converters and

general purpose switching

applications.

V_DS

I_D

Drain-source voltage

5.5

2.5

8.3

150

˚C

mΩ

Drain current (DC) T_sp= 25 ˚C

Drain current (DC) T_amb= 25 ˚C

Total power dissipation

Junction temperature

P_tot

T_j

R_DS(ON)

Drain-source on-state

resistance

V_GS= 5 V

PINNING - SOT223

PIN CONFIGURATION

SYMBOL

DESCRIPTION

gate

drain

source

drain (tab)

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_DS

V_DGR

V_GS

I_D

Drain-source voltage

Drain-gate voltage

Gate-source voltage

Drain current (DC)

R_GS= 20 kΩ

±13

5.5

2.5

3.8

1.75

T_sp= 25 ˚C

T_amb= 25 ˚C

T_sp= 100 ˚C

T_amb= 100 ˚C

T_sp= 25 ˚C

T_amb= 25 ˚C

T_sp= 25 ˚C

T_amb= 25 ˚C

I_D

Drain current (DC)

I_DM

Drain current (pulse peak value)

Total power dissipation

P_tot

8.3

1.8

150

˚C

T_stg, T_j

Storage & operating temperature

- 55

ESD LIMITING VALUE

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V_C

Electrostatic discharge capacitor

voltage

Human body model

(100 pF, 1.5 kΩ)

January 1998

Rev 1.100

12 3 4 5 6 7...9

中文翻译

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PHT6N06LT 替代型号

型号	品牌	替代类型	描述	数据表
BUK78150-55A	NXP	类似代替	TrenchMOS standard level FET
BUK98150-55A	NXP	类似代替	TrenchMOS logic level FET

与PHT6N06LT相关器件

型号	品牌	获取价格	描述	数据表
PHT6N06LT,135	NXP	获取价格	N-channel TrenchMOS logic level FET SC-73 4-Pin
PHT6N06LT/T3	NXP	获取价格	TRANSISTOR SMD UNIVERSAL MOSFET SOT
PHT6N06LT115	NXP	获取价格	TRANSISTOR 2.5 A, 55 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
PHT6N06LTT/R	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 55V V(BR)DSS \| 2.5A I(D) \| SOT-223
PHT6N06T	NXP	获取价格	TrenchMOS transistor Standard level FET
PHT6N06T,135	NXP	获取价格	PHT6N06T - N-channel TrenchMOS standard level FET SC-73 4-Pin
PHT6N06T/T3	NXP	获取价格	TRANSISTOR SMD UNIVERSAL MOSFET SOT
PHT6N06TT/R	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 55V V(BR)DSS \| 2.5A I(D) \| SOT-223
PHT6N10T	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 6A I(D) \| SOT-223
PHT6NQ10T	NXP	获取价格	N-channel TrenchMOS transistor