Datasheet > BUK7880-55,135

BUK7880-55,135

更新时间： 2024-11-12 03:50:19

品牌	Logo	应用领域
恩智浦 - NXP		开关脉冲光电二极管晶体管
页数	文件大小	规格书
13页	161K
描述
N-channel TrenchMOS standard level FET SC-73 4-Pin

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BUK7880-55,135 数据手册

BUK7880-55

T223

N-channel TrenchMOS standard level FET

Rev. 3 — 21 April 2011

Product data sheet

1. Product profile

1.1 General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product has been designed and qualified to

the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits

AEC Q101 compliant

Low conduction losses due to low

on-state resistance

Electrostatically robust due to

integrated protection diodes

1.3 Applications

Automotive and general purpose

power switching

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min Typ Max Unit

drain-source voltage

drain current

T_j≥ 25 °C; T_j≤ 150 °C

I_D

T_sp= 25 °C

7.5

1.8

P_tot

total power dissipation T_sp= 25 °C; T_amb= 25 °C

Static characteristics

R_DSondrain-source on-state

resistance

Avalanche ruggedness

V_GS= 10 V; I_D= 5 A;

T_j= 25 °C

mΩ

E_DS(AL)S

non-repetitive

drain-source

I_D= 2.5 A; V_sup≤ 25 V;

R_GS= 50 Ω; V_GS= 10 V;

T_j(init)= 25 °C; unclamped

avalanche energy

12 3 4 5 6 7...13

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BUK7880-55,135 替代型号

型号	品牌	替代类型	描述	数据表
BUK7880-55	NXP	类似代替	TrenchMOS transistor Standard level FET
STN3NF06L	STMICROELECTRONICS	功能相似	N-CHANNEL 60V - 0.07ohm - 4A SOT-223 STripFET

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