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BUK78150-55ATRL13 PDF预览

BUK78150-55ATRL13

更新时间: 2024-11-27 14:48:11
品牌 Logo 应用领域
恩智浦 - NXP 开关脉冲光电二极管晶体管
页数 文件大小 规格书
13页 284K
描述
5.5A, 55V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SC-73, 3 PIN

BUK78150-55ATRL13 技术参数

生命周期:Obsolete零件包装代码:SC-73
包装说明:SMALL OUTLINE, R-PDSO-G4针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.17Is Samacsys:N
雪崩能效等级(Eas):25 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:55 V
最大漏极电流 (ID):5.5 A最大漏源导通电阻:0.15 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G4
元件数量:1端子数量:4
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):22 A认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

BUK78150-55ATRL13 数据手册

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BUK78150-55A  
TrenchMOS™ standard level FET  
Rev. 01 — 30 January 2001  
Product specification  
M3D087  
1. Description  
N-channel enhancement mode field-effect power transistor in a plastic package using  
TrenchMOS™1 technology, featuring very low on-state resistance.  
Product availability:  
BUK78150-55A in SOT223 (SC-73).  
2. Features  
TrenchMOS™ technology  
Q101 compliant  
150 °C rated  
Standard level compatible.  
3. Applications  
Automotive and general purpose power switching:  
12 V and 24 V loads  
c
c
Motors, lamps and solenoids.  
4. Pinning information  
Table 1: Pinning - SOT223 (SC-73), simplified outline and symbol  
Pin  
1
Description  
gate (g)  
Simplified outline  
Symbol  
4
d
s
2
drain (d)  
3
source (s)  
drain (d)  
g
4
1
2
3
MBB076  
MSB002 - 1  
Top view  
SOT223 (SC-73)  
1. TrenchMOS is a trademark of Royal Philips Electronics.  

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