生命周期: | Obsolete | 零件包装代码: | SOT-223 |
包装说明: | SMALL OUTLINE, R-PDSO-G4 | 针数: | 4 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.69 | 其他特性: | LOGIC LEVEL COMPATIBLE |
雪崩能效等级(Eas): | 15 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 55 V |
最大漏极电流 (ID): | 5.5 A | 最大漏源导通电阻: | 0.15 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G4 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 4 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 30 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | MATTE TIN | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BUK78150-55,115 | NXP |
获取价格 |
2.6A, 55V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET | |
BUK78150-55,135 | NXP |
获取价格 |
2.6A, 55V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET | |
BUK78150-55115 | NXP |
获取价格 |
TRANSISTOR 2.6 A, 55 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
BUK78150-55135 | NXP |
获取价格 |
TRANSISTOR 2.6 A, 55 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
BUK78150-55A | NXP |
获取价格 |
TrenchMOS standard level FET | |
BUK78150-55A | NEXPERIA |
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N-channel TrenchMOS standard level FETProduction | |
BUK78150-55A,115 | NXP |
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BUK78150-55A - N-channel TrenchMOS standard level FET SC-73 4-Pin | |
BUK78150-55A,135 | NXP |
获取价格 |
BUK78150-55A - N-channel TrenchMOS standard level FET SC-73 4-Pin | |
BUK78150-55A/T3 | NXP |
获取价格 |
TRANSISTOR 5.5 A, 55 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SC-73, 4 PIN, FET | |
BUK78150-55ATRL | NXP |
获取价格 |
5.5A, 55V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SC-73, 3 PIN |