Datasheet > BTD2040N3S

BTD2040N3S

更新时间： 2022-02-26 13:36:51

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		/
页数	文件大小	规格书
8页	280K
描述
Low Vcesat NPN Epitaxial Planar Transistor

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数据手册

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BTD2040N3S 数据手册

Spec. No. : C223N3-A

Issued Date : 2004.02.18

Revised Date :2012.10.03

Page No. : 1/6

CYStech Electronics Corp.

Low Vcesat NPN Epitaxial Planar Transistor

BVCEO

RCESAT

25V

0.31Ω(typ.)

BTD2040N3S

Features

• The BTD2040N3S is designed for general purpose low frequency power amplifier applications.

• Low VCE(sat), VCE(sat)=40mV (typical), at IC / IB = 50mA / 2.5mA

• Pb-free lead plating and halogen-free package

Symbol

Outline

BTD2040N3S

SOT-23

B：Base

C：Collector

E：Emitter

Absolute Maximum Ratings (Ta=25°C)

Parameter

Symbol

Limits

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Power Dissipation

VCBO

VCEO

VEBO

ICP

°C

(Note)

225

150

-55~+150

Junction Temperature

Storage Temperature

Tstg

Note : Single pulse, Pw=10ms

BTD2040N3S

CYStek Product Specification

12 3 4 5 6 7 8

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