Datasheet > BTD2150AM3

BTD2150AM3

更新时间： 2024-02-01 14:19:44

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		晶体晶体管
页数	文件大小	规格书
5页	182K
描述
Low Vcesat NPN Epitaxial Planar Transistor

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数据手册

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BTD2150AM3 数据手册

Spec. No. : C848M3-A

Issued Date : 2002.08.18

Revised Date : 2005.10.04

Page No. : 1/5

CYStech Electronics Corp.

Low Vcesat NPN Epitaxial Planar Transistor

BTD2150AM3

Features

• Low VCE(sat), VCE(sat)=0.1 V (typical), at IC / IB = 1A / 50mA

• Excellent current gain characteristics

• Complementary to BTB1424AM3

• Pb-free package

Symbol

Outline

BTD2150AM3

SOT-89

B：Base

C：Collector

E：Emitter

B C E

Absolute Maximum Ratings (Ta=25°C)

Parameter

Symbol

Limits

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

VCBO

VCEO

VEBO

0.6

Power Dissipation

Junction Temperature

Storage Temperature

Tstg

150

°C

-55~+150

Note : *1 Printed circuit board, 1.7mm thick, collector copper plating 10mm*10mm.

*2 When mounted on a 40*40*0.7mm ceramic board.

BTD2150AM3

CYStek Product Specification

12 3 4 5

中文翻译

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