Datasheet > BTD2444S3

BTD2444S3

更新时间： 2024-10-01 03:23:03

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		晶体晶体管
页数	文件大小	规格书
5页	179K
描述
Low Vcesat NPN Epitaxial Planar Transistor

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中文翻译

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数据手册

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BTD2444S3 数据手册

Spec. No. : C223S3-R

Issued Date : 2005.06.29

Revised Date :

CYStech Electronics Corp.

Page No. : 1/4

Low Vcesat NPN Epitaxial Planar Transistor

BTD2444S3

Features

• The BTD2444S3 is designed for general purpose low frequency power amplifier applications.

• Low VCE(sat), VCE(sat)=40mV (typical), at IC / IB = 50mA / 2.5mA

• Pb-free package

Symbol

Outline

BTD2444S3

SOT-323

B：Base

C：Collector

E：Emitter

Absolute Maximum Ratings (Ta=25°C)

Parameter

Symbol

Limits

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Power Dissipation

VCBO

VCEO

VEBO

800

°C

ICP

1.5 (Note)

225

Junction Temperature

Storage Temperature

150

Tstg

-55~+150

Note : Single pulse, Pw=10ms

BTD2444S3

CYStek Product Specification

12 3 4 5

中文翻译

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