Datasheet > BTD2195L3

BTD2195L3

更新时间： 2024-02-04 18:47:23

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		晶体晶体管
页数	文件大小	规格书
5页	160K
描述
NPN Epitaxial Planar Transistor

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数据手册

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BTD2195L3 数据手册

Spec. No. : C654L3

Issued Date : 2007.02.09

Revised Date :

CYStech Electronics Corp.

Page No. : 1/5

NPN Epitaxial Planar Transistor

BTD2195L3

Description

The BTD2195L3 is a NPN Darlington transistor, designed for use in general purpose amplifier and low

speed switching application. Pb-free package process is adopted.

Equivalent Circuit

Outline

BTD2195L3

SOT-223

B：Base

C：Collector

E：Emitter

Absolute Maximum Ratings (Ta=25°C)

Parameter

Symbol

Limits

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Power Dissipation @ TC=25℃

Thermal Resistance, Junction to Case

Junction Temperature

VCBO

VCEO

VEBO

130

120

150

ICP

(Note )

RθJC

°C/W

°C

Storage Temperature

Tstg

-55~+150

≦

Note : Single Pulse Pw 350μs, Duty 2%.

BTD2195L3

CYStek Product Specification

12 3 4 5

中文翻译

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