Datasheet > BTD2195J3

BTD2195J3

更新时间： 2024-02-24 12:44:15

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		晶体晶体管
页数	文件大小	规格书
6页	235K
描述
NPN Epitaxial Planar Transistor

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数据手册

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BTD2195J3 数据手册

Spec. No. : C654J3

Issued Date : 2004.03.18

Revised Date :2009.02.04

Page No. : 1/6

CYStech Electronics Corp.

NPN Epitaxial Planar Transistor

BVCEO

RCESAT

120V

600mΩ

BTD2195J3

Description

The BTD2195J3 is a NPN Darlington transistor, designed for use in general purpose amplifier and low

speed switching application. RoHS compliant package process is adopted.

Equivalent Circuit

Outline

BTD2195J3

TO-252

B：Base

B C E

C：Collector

E：Emitter

Absolute Maximum Ratings (Ta=25°C)

Parameter

Symbol

Limits

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

VCBO

VCEO

VEBO

130

120

ICP

(Note )

Pd(TA=25℃)

Pd(T^C=25℃)

1.5

83.3

°C/W

°C

Power Dissipation

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

Junction Temperature

Storage Temperature

Note : Single Pulse Pw 350μs, Duty 2%.

RθJA

RθJC

6.25

150

-55~+150

Tstg

°C

≦

BTD2195J3

CYStek Product Specification

12 3 4 5 6

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