Datasheet > BTD2097AI3

BTD2097AI3

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		晶体晶体管
页数	文件大小	规格书
4页	156K
描述
Low Vcesat NPN Epitaxial Planar Transistor

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数据手册

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BTD2097AI3 数据手册

Spec. No. : C847I3-D9065T

Issued Date : 2003.03.26

Revised Date :

CYStech Electronics Corp.

Page No. : 1/4

Low Vcesat NPN Epitaxial Planar Transistor

BTD2097AI3

Features

• Low VCE(sat), V^CE(sat)=0.35 V (typical), at IC / IB = 4A / 0.1A

• Excellent current gain characteristics

• Complementary to BTB1412AI3

Symbol

Outline

BTD2097AI3

TO-251

B：Base

C：Collector

E：Emitter

B C E

Absolute Maximum Ratings ^(Ta=25^°^C)

Parameter

Symbol

Limits

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

V^CBO

V^CEO

V^EBO

I^C(DC)

Collector Current

I^C(Pulse)

Pd@ T^A=25℃

Pd@ T^C=25℃

150

Power Dissipation

Junction Temperature

Storage Temperature

°C

Tstg

-55~+150

≦

Note : *1. Single Pulse , Pw 380µs,Duty 2%.

*2. When mounted on a 40*40*0.7mm ceramic board.

BTD2097AI3

CYStek Product Specification

12 3 4

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