Datasheet > BTD2098LN3

BTD2098LN3

更新时间： 2024-02-06 22:48:42

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		晶体晶体管
页数	文件大小	规格书
5页	250K
描述
Low Vcesat NPN Epitaxial Planar Transistor

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数据手册

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BTD2098LN3 数据手册

Spec. No. : C850N3

Issued Date : 2004.01.28

Revised Date :2005.07.15

Page No. : 1/5

CYStech Electronics Corp.

Low Vcesat NPN Epitaxial Planar Transistor

BTD2098LN3

Features

• Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 3A / 0.1A

• Excellent DC current gain characteristics

• Complementary to BTB1386LN3

• Pb-free package

Symbol

Outline

BTD2098LN3

SOT-23

B：Base

C：Collector

E：Emitter

Absolute Maximum Ratings (Ta=25°C)

Parameter

Symbol

Limits

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current (DC)

Collector Current (Pulse)

Power Dissipation

VCBO

VCEO

VEBO

ICP

(Note 1)

0.9 (Note 2)

150

°C

Junction Temperature

Storage Temperature

Tstg

-55~+150

≦

Note : 1.Single Pulse Pw 350µs, Duty 2%.

2.When mounted on a ceramic board with area of 600mm²×0.8mm

BTD2098LN3

CYStek Product Specification

12 3 4 5

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