BSS63LT1D

更新时间： 2024-11-24 06:44:23

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管高压
页数	文件大小	规格书
3页	108K
描述
High Voltage Transistor

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中文翻译

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数据手册

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BSS63LT1D 数据手册

BSS63LT1G

High Voltage Transistor

PNP Silicon

Features

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

http://onsemi.com

Compliant

COLLECTOR

MAXIMUM RATINGS

Rating

Collector−Emitter Voltage

Symbol

Value

Unit

Vdc

CEO

CER

−100

BASE

= 10 kW

−110

−100

Collector Current − Continuous

THERMAL CHARACTERISTICS

Characteristic

mAdc

EMITTER

Symbol

Max

Unit

Total Device Dissipation FR−5 Board,

(Note 1) T = 25°C

225

1.8

Derate above 25°C

mW/°C

°C/W

Thermal Resistance Junction−to−Ambient

556

SOT−23

CASE 318

STYLE 6

Total Device Dissipation

Alumina Substrate, (Note 2)

T = 25°C

300

2.4

mW/°C

Derate above 25°C

Thermal Resistance, Junction−to−Ambient

Junction and Storage Temperature

417

°C/W

°C

MARKING DIAGRAM

T , T

−55 to

+150

stg

BM M G

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−5 = 1.0 x 0.75 x 0.062 in.

= Device Code

= Date Code*

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

= Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

ORDERING INFORMATION

†

Device

Package

Shipping

BSS63LT1G

SOT−23

3000/Tape & Reel

(Pb−free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Publication Order Number:

August, 2009 − Rev. 5

BSS63LT1/D

12 3

中文翻译

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