生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.14 | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 80 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 20 | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
最大关闭时间(toff): | 1000 ns | VCEsat-Max: | 0.2 V |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
TMPTA06LT | ALLEGRO |
功能相似 ![]() |
Small Signal Bipolar Transistor, 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB |
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BSS64 | DIOTEC |
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Surface mount Si-Epitaxial PlanarTransistors |
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型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSS64A | ROHM |
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BSS64A是采用SOT-23封装的晶体管,适用于高耐压放大。 |
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BSS64AHZG | ROHM |
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BSS64AHZG是采用SOT-23封装的晶体管,适用于高耐压放大。并且是符合AEC-Q1 |
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BSS64D87Z | TI |
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200mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
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BSS64E6327 | ROCHESTER |
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800mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR |
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BSS64E6327 | INFINEON |
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Small Signal Bipolar Transistor, 0.8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon |
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BSS64E6433 | INFINEON |
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Small Signal Bipolar Transistor, 0.8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon |
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BSS64L | MOTOROLA |
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100mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, CASE 318-07, 3 PIN |
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BSS64L99Z | TI |
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200mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
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BSS64LT1 | LRC |
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Driver Transistors(NPN Silicon) |
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BSS64LT1 | MOTOROLA |
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Driver Transistor(NPN) |
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