Datasheet > BSS63R-T6

BSS63R-T6

更新时间： 2024-11-20 03:22:55

品牌	Logo	应用领域
捷特科 - ZETEX		晶体晶体管高压局域网
页数	文件大小	规格书
1页	30K
描述
SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR

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数据手册

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BSS63R-T6 数据手册

SOT23 PNP SILICON PLANAR

HIGH VOLTAGE TRANSISTOR

BSS63

ISSUE 2 SEPTEMBER 95

✪

COMPLIMENTARY TYPE BSS64

PARTMARKING DETAIL

BSS63 - T3

BSS63R - T6

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

VALUE

-110

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

-100

Emitter-Base Voltage

-6

Continuous Collector Current

Power Dissipation at T_amb=25°C

Operating and Storage Temperature Range

-100

°C

P_TOT

t_j:t_stg

330

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

= 25°C).

amb

PARAMETER

SYMBOL

V_(BR)

MIN.

-110

MAX.

UNIT CONDITIONS.

Collector-Base

Breakdown Voltage

I_C=-10µA

I_C=-100µA*

I_E=-10µA

Collector-Emitter

Breakdown Voltage

V_(BR)CEO

-100

-6

Emitter-Base Breakdown V_(BR)EBO

Voltage

Collector Cut-Off Current I_EBO

-100

-50

µ A

V_CB=-90V,

V_CB=-90V,T_amb=150 C

Emitter Cut-Off Current

I_EBO

-200

-250

nA V_EB=-6V

Collector-Emitter

Saturation Voltage

V_CE(sat)

mV I_C=-25mA, I_B=-2.5mA

Base-Emitter Saturation

Voltage

V_BE(sat)

-900

mV I_C=-25mA, I_B=-2.5mA

Static Forward Current

I_C=-10mA, V_CE=-1V

I_C=25mA, V_CE=1V

h_FE

f_T

Transition Frequency

Typ

V_CE=-5V, I_C=25mA

f=35 MHz

MHz

Typ.

Output Capacitance

C_obo

V_CB=-10V, f=1MHz

* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

PAGE NUMBER

中文翻译

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