Datasheet > BSS63-Q

BSS63-Q

更新时间： 2023-09-03 20:27:26

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
7页	175K
描述
PNP high-voltage transistorProduction

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中文翻译

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数据手册

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BSS63-Q 数据手册

BSS63-Q

PNP high-voltage transistor

10 June 2022

Product data sheet

1. General description

PNP high-voltage transistor in a SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic

package.

2. Features and benefits

•

Low current (max. 100 mA)

•

High voltage (max. 100 V)

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

High-voltage general purpose

Switching applications

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_CEO

collector-emitter

voltage

open base

-100

I_C

collector current

DC current gain

-100

h_FE

V_CE= -1 V; I_C= -10 mA; T_amb= 25 °C

5. Pinning information

Table 2. Pinning information

Symbol

Description

base

Simplified outline

Graphic symbol

emitter

collector

sym132

SOT23

12 3 4 5 6 7

中文翻译

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BSS63S62Z	TI	获取价格	200mA, 100V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
BSS63-T	NXP	获取价格	TRANSISTOR 100 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, B
BSS63T/R	NXP	获取价格	TRANSISTOR 100 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, B
BSS63-T3	ZETEX	获取价格	SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
BSS63TA	DIODES	获取价格	Small Signal Bipolar Transistor, 0.1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon