生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.68 | 最大集电极电流 (IC): | 0.2 A |
集电极-发射极最大电压: | 100 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 30 | JEDEC-95代码: | TO-236AB |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 50 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSS63-T | NXP |
获取价格 |
TRANSISTOR 100 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, B | |
BSS63T/R | NXP |
获取价格 |
TRANSISTOR 100 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, B | |
BSS63-T3 | ZETEX |
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SOT23 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR | |
BSS63TA | DIODES |
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Small Signal Bipolar Transistor, 0.1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon | |
BSS63-TAPE-13 | NXP |
获取价格 |
TRANSISTOR 100 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Sign | |
BSS63-TAPE-7 | NXP |
获取价格 |
TRANSISTOR 100 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Sign | |
BSS63TC | DIODES |
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Small Signal Bipolar Transistor, 0.1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon | |
BSS63TRL | YAGEO |
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Small Signal Bipolar Transistor, 0.1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon | |
BSS63TRL13 | YAGEO |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon | |
BSS63TRL13 | NXP |
获取价格 |
TRANSISTOR 100 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Sign |