Datasheet > BSS64

BSS64

更新时间： 2024-11-24 06:44:23

品牌	Logo	应用领域
科信 - KEXIN		晶体放大器晶体管开关光电二极管
页数	文件大小	规格书
1页	39K
描述
NPN General Purpose Amplifier

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中文翻译

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数据手册

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BSS64 数据手册

SMD Type

TransistIoCrs

NPN General Purpose Amplifier

BSS64

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

Features

NPN general purpose amplifier

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

-0.1

1.9

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25 unless otherwise noted

Parameter

Collector-emitter voltage

Symbol

V^CE0

V^CBO

V^EBO

I^C

Rating

Unit

120

Collector-base voltage

Emitter-base voltage

Collector current

200

Junction temperature

Storage temperature

T^j

150

Tstg

-55 to +150

Total device dissipation

Derate above 25

350

2.8

mW/

Thermal resistance, junction to ambient

RèJA

357

Electrical Characteristics Ta = 25 unless otherwise noted

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector-emitter breakdown voltage

Collector-base breakdown voltage

Emitter-base breakdown voltage

V^(BR)CEOIC = 4.0 mA, IB = 0

V^(BR)CBOIC = 100 ìA, IE = 0

V^(BR)EBOIE = 100 ìA, IC = 0

120

V^CB= 90 V, IE = 0

ICBO

0.1

ìA

Collector-cutoff current

V^CB= 90 V, IE = 0, TA = 150

Emitter-base cut-off current

DC current gain

IEBO

VEB = 5.0 V, IC = 0

200

h^FE

IC = 10 mA, VCE = 1.0 V

I^C= 4.0 mA, IB = 400ìA

I^C= 50 mA, IB = 15 mA

IC = 4.0 mA, IB = 400 ìA

0.15

0.2

Collector-emitter saturation voltage

VCE(sat)

Base-emitter saturation voltage

Current gain - bandwidth product

Output capacitance

V^BE(sat)

f^T

1.2

IC = 4.0 mA, VCE = 10,f = 35 MHz

VCB = 10 V, f = 1.0 MHz

MHz

C^ob

Marking

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