Datasheet > BSS64

BSS64

更新时间： 2024-09-25 12:53:47

品牌	Logo	应用领域
TYSEMI		晶体放大器晶体管开关光电二极管
页数	文件大小	规格书
1页	103K
描述
NPN general purpose amplifier Collector current IC 200 mA

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中文翻译

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数据手册

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BSS64 数据手册

SMD Type

SSMMDD TTyyppee

TransistIoCrs

Product specification

BSS64

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

Features

NPN general purpose amplifier

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

-0.1

1.9

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25 unless otherwise noted

Parameter

Collector-emitter voltage

Symbol

V^CE0

V^CBO

V^EBO

I^C

Rating

Unit

120

Collector-base voltage

Emitter-base voltage

Collector current

200

Junction temperature

Storage temperature

T^j

150

T^stg

-55 to +150

Total device dissipation

Derate above 25

350

2.8

P^D

mW/

Thermal resistance, junction to ambient

R^èJA

357

Electrical Characteristics Ta = 25 unless otherwise noted

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector-emitter breakdown voltage

Collector-base breakdown voltage

Emitter-base breakdown voltage

V^(BR)CEOI^C= 4.0 mA, I^B= 0

V^(BR)CBOI^C= 100 ìA, I^E= 0

V^(BR)EBOI^E= 100 ìA, I^C= 0

120

V^CB= 90 V, I^E= 0

I^CBO

0.1

ìA

Collector-cutoff current

V^CB= 90 V, I^E= 0, T^A= 150

Emitter-base cut-off current

DC current gain

I^EBO

h^FE

V^EB= 5.0 V, I^C= 0

200

I^C= 10 mA, V^CE= 1.0 V

I^C= 4.0 mA, I^B= 400ìA

I^C= 50 mA, I^B= 15 mA

I^C= 4.0 mA, I^B= 400 ìA

0.15

0.2

Collector-emitter saturation voltage

V^CE(sat)

Base-emitter saturation voltage

Current gain - bandwidth product

Output capacitance

V^BE(sat)

f^T

1.2

I^C= 4.0 mA, V^CE= 10,f = 35 MHz

V^CB= 10 V, f = 1.0 MHz

MHz

C^ob

Marking

http://www.twtysemi.com

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sales@twtysemi.com

4008-318-123

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