是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | SOT-23 |
包装说明: | SMALL OUTLINE, R-PDSO-G3 | 针数: | 3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.21.00.95 | 风险等级: | 5.08 |
Is Samacsys: | N | 其他特性: | LOGIC LEVEL COMPATIBLE |
配置: | SINGLE | 最小漏源击穿电压: | 240 V |
最大漏极电流 (Abs) (ID): | 0.1 A | 最大漏极电流 (ID): | 0.11 A |
最大漏源导通电阻: | 14 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss): | 4.2 pF | JESD-30 代码: | R-PDSO-G3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 0.36 W | 认证状态: | Not Qualified |
参考标准: | CECC | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
BSS131H6327XTSA1 | INFINEON |
类似代替 |
Small Signal Field-Effect Transistor, 0.11A I(D), 240V, 1-Element, N-Channel, Silicon, Met | |
BSS123LT1G | ONSEMI |
功能相似 |
Power MOSFET 170 mAmps, 100 Volts |
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