Datasheet > BSS138

BSS138

更新时间： 2023-12-06 19:52:12

品牌	Logo	应用领域
鲁光 - LGE		晶体管场效应晶体管
页数	文件大小	规格书
5页	1236K
描述
场效应晶体管

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数据手册

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BSS138 数据手册

BSS138

SOT-23 Plastic-Encapsulate N-Channel MOSFETS

I_D

SOT-23

V_(BR)DSS

R_DS(on)MAX

10V

3.5

220m

1. GATE

6Ω 4.5V

2. SOURCE

3. DRAIN

APPLICATION

FEATURE

Direct Logic-Level Interface: TTL/CMOS

Drivers: Relays, Solenoids, Lamps, Hammers,Display,

Memories, Transistors, etc.

High density cell design for extremely low R_DS(on)

Rugged and Relaible

Battery Operated Systems

Solid-State Relays

Equivalent Circuit

MARKING

Maximum ratings (T_a=25℃ unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain-Source Voltage

V_DS

V_GSS

I_D

±20

Continuous Gate-Source Voltage

Continuous Drain Current

Power Dissipation

0.22

P_D

0.35

Thermal Resistance from Junction to Ambient

Operating Temperature

R_θJA

T_j

357

℃/W

150

℃

Storage Temperature

T_stg

-55 ~+150

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mail:lge@lgesemi.com

Revision:20170701-P1

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