Datasheet > BSS138

BSS138

更新时间： 2024-02-11 02:24:51

品牌	Logo	应用领域
TYSEMI		/
页数	文件大小	规格书
3页	668K
描述
VDS (V) = 50V ID = 0.22 A RDS(ON) 3.5 (VGS = 10V) RDS(ON) 6 (VGS = 4.5V)

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数据手册

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BSS138 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.55
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

BSS138 数据手册

SMD Type

SSMD Type

MOSFET

Product specification

BSS138

SOT-23

■ Features

● VDS (V) = 50V

Unit: mm

+0.1

2.9_-0.1

+0.1

0.4_-0.1

● ID = 0.22 A

● RDS(ON) ≤ 3.5Ω (VGS = 10V)

● RDS(ON) ≤ 6Ω (VGS = 4.5V)

+0.1

+0.05

0.95_-0.1

0.1_-0.01

+0.1

1.9_-0.1

1.Base

1. Gate

2.Emitter

2. Source

3. Drain

3.collector

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-to-source voltage

Symbol

VDSS

Rating

Unit

Gate-to-source voltage

VGS

±20

200

Drain Current

– Continuous

– Pulsed

800

300

Total power dissipation @ TA = 25℃

Thermal resistance,junction-to-ambient

Operating and storage temperature range

RθJA

417

℃/W

TJ, Tstg

-55 to 150

℃

■ Electrical Characteristics Ta = 25℃

Parameter

Symbol

V(BR)DSS

IDSS

Test conditons

Min

Typ Max

Unit

Drain-to-source breakdown voltage

Zero Gate Voltage Drain Current

Gate-source leakage current

Gate-source threshold voltage

VGS = 0 V, ID = 250 μA

VDS = 50 V, VGS = 0

0.8

100

0.5

±0.1

1.5

3.5

μA

IGSS

VGS = ± 20 V, VDS = 0

VDS = VGS, ID = 1.0 mA

VGS = 10V, ID = 0.22A

VGS = 4.5V, ID = 0.22A

VGS(th)

Static drain-to-source on-rResistance

RDS(on)

Forward transconductance

Input capacitance

gfs

VDS = 25 V, ID = 200 mA, f = 1.0 kHz

Ciss

VDS = 10 V, VGS = 0, f = 1 MHz

Output capacitance

Transfer capacitance

Turn-on delay time

Turn-off delay time

Coss

Crss

td(on)

td(off)

VDD = 30 V, ID = 0.2 A,RGEN = 50

■ Marking

Marking

http://www.twtysemi.com

sales@twtysemi.com

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