Datasheet > BSS138

BSS138

更新时间： 2024-11-26 14:55:15

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
5页	961K
描述
SOT-23

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中文翻译

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数据手册

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BSS138 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate MOSFETS

BSS138

N-Channel 50-V(D-S) MOSFET

I_D

SOT-23

V_(BR)DSS

R_DS(on)MAX

10V

3.5

220m

1. GATE

6Ω 4.5V

2. SOURCE

3. DRAIN

APPLICATION

FEATURE

Direct Logic-Level Interface: TTL/CMOS

Drivers: Relays, Solenoids, Lamps, Hammers,Display,

Memories, Transistors, etc.

High density cell design for extremely low R_DS(on)

Rugged and Relaible

Battery Operated Systems

Solid-State Relays

MARKING

Equivalent Circuit

SS=Device code

Solid dot = Green molding compound device.

Maximum ratings (T_a=25℃ unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain-Source Voltage

V_DS

V_GSS

I_D

Continuous Gate-Source Voltage

Continuous Drain Current

±20

0.22

Pulsed Drain Current (tp=10us)

I_DM

0.88

0.35

357

Power Dissipation

P_D

℃/W

Thermal Resistance from Junction to Ambient

R_θJA

Operation Junction and Storage Temperature Range

T_j,T_stg

℃

-55 ~+150

www.jscj-elec.com

Rev. - 2.2

12 3 4 5

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BSS138_11	UTC	获取价格	N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE
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