Datasheet > BSS138

BSS138

更新时间： 2024-02-11 17:09:00

品牌	Logo	应用领域
新洁能 - NCEPOWER		/
页数	文件大小	规格书
7页	289K
描述
NCE N-Channel Enhancement Mode Power MOSFET

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技术参数
数据手册

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BSS138 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.55
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

BSS138 数据手册

Pb Free Product

http://www.ncepower.com

BSS138

NCE N-Channel Enhancement Mode Power MOSFET

GENERAL FEATURES

● V_DS= 50V,I_D= 0.22A

R_DS(ON)< 3Ω @ V_GS=4.5V

R_DS(ON)< 2Ω @ V_GS=10V

Schematic diagram

● Lead free product is acquired

● Surface Mount Package

Application

●Direct Logic-Level Interface: TTL/CMOS

●Drivers: Relays, Solenoids, Lamps, Hammers,Display,

Memories, Transistors, etc.

Marking and pin Assignment

●Battery Operated Systems

●Solid-State Relays

SOT-23 top view

Package Marking And Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

3000 units

138

BSS138

SOT-23

Ø180mm

8 mm

Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Parameter Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^DS

V^GS

I_D

±20

0.22

0.88

0.35

Drain Current-Pulsed (Note 1)

I_DM

Maximum Power Dissipation

℃

P_D

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient (Note 2)

R_θJA

350

℃/W

Electrical Characteristics (TA=25℃unless otherwise noted)

Parameter

Symbol

Condition

Min Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

BV_DSS

I_DSS

V_GS=0V I_D=250μA

V_DS=50V,V_GS=0V

0.5

μA

Wuxi NCE Power Semiconductor Co., Ltd

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