Datasheet > BSS138

BSS138

更新时间： 2024-11-24 22:48:31

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描述
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET

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BSS138 数据手册

SOT23 N-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

BSS138

ISSUE 3 – MARCH 1996

✪

PARTMARKING DETAIL

– SS

SOT23

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_DS

VALUE

UNIT

Drain-Source Voltage

Continuous Drain Current at T_{am b}=25°C

Pulsed Drain Current

I_D

200

m A

I_DM

800

Gate-Source Voltage

V_GS

± 20

Power Dissipation at T_{am b}=25°C

Operating and Storage Tem perature Range

ELECTRICAL CHARACTERISTICS (at T

P_tot

360

m W

°C

T_j:T_stg

-55 to +150

= 25°C unless otherw ise stated).

am b

PARAMETER

SYMBOL MIN. MIN. MAX. UNIT CONDITIONS.

Drain-Source

BV_DSS

I_D=0.25m A, V_GS=0V

Breakdown Voltage

Gate-Source Threshold

Voltage

V_GS(th)

0.5

1.5

I_D=1m A, V_DS= V_GS

Gate-Body Leakage

I_GSS

I_DSS

100

_GS=± 20V, V_DS=0V

Zero Gate Voltage

Drain Current

0.5

100

V_DS=50V, V_GS=0

µA

V_DS=50V, V_GS=0V, T=125°C(2)

V_DS=20V, V_GS=0

Static Drain-Source

On-State Resistance (1)

R_DS(on)

g_fs

3.5

V_GS=5V,I_D=200m A

Ω

Forward

120

m S

V_DS=25V,I_D=200m A

Transconductance(1)(2)

Input Capacitance (2)

C_iss

Comm on Source

C_oss

V_DS=25V, V_GS=0V, f=1MHz

Output Capacitance (2)

Reverse Transfer

Capacitance (2)

C_rss

Turn-On Delay Tim e (2)(3) t_d(on)

Rise Tim e (2)(3) t_r

Turn-Off Delay Tim e (2)(3) t_d(off)

Fall Tim e (2)(3) t_f

V_DD≈30V, I_D=280m A

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sam ple test.

(3) Switching tim es m easured with 50Ω source im pedance and <5ns rise tim e on a pulse generator

3 - 72

12 3

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