型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSS127G-AE2-R | UTC |
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Small Signal Bipolar Transistor | |
BSS127G-AE3-R | UTC |
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0.021A, 600V SMALL-SIGNAL-TRANSISTOR | |
BSS127H6327 | INFINEON |
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Small Signal Field-Effect Transistor, 0.021A I(D), 600V, 1-Element, N-Channel, Silicon, Me | |
BSS127H6327XTSA2 | INFINEON |
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Small Signal Field-Effect Transistor, 0.021A I(D), 600V, 1-Element, N-Channel, Silicon, Me | |
BSS127I | INFINEON |
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N-沟道增强模式 MOSFET BSS127I 采用 SOT-23-3 封装,其特性为 V | |
BSS127L6327 | INFINEON |
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Small Signal Field-Effect Transistor, 0.021A I(D), 600V, 1-Element, N-Channel, Silicon, Me | |
BSS127L6327HTSA1 | INFINEON |
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Small Signal Field-Effect Transistor, 0.021A I(D), 600V, 1-Element, N-Channel, Silicon, Me | |
BSS127L-AE2-R | UTC |
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Small Signal Bipolar Transistor | |
BSS127L-AE3-R | UTC |
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0.021A, 600V SMALL-SIGNAL-TRANSISTOR | |
BSS127S | DIODES |
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N-CHANNEL ENHANCEMENT MODE MOSFET |