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BSS127_10 PDF预览

BSS127_10

更新时间: 2024-11-21 12:20:03
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 253K
描述
SIPMOS Small-Signal-Transistor

BSS127_10 数据手册

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BSS127  
SIPMOS® Small-Signal-Transistor  
Features  
Product Summary  
V DS  
600  
V
A
• n-channel  
R DS(on),max  
I D  
500  
• enhancement mode  
0.021  
• Logic level (4.5V rated)  
• dv /dt rated  
• Qualified according to AEC Q101  
• 100%lead-free; RoHS compliant  
PG-SOT-23  
Type  
Package  
Pb-free  
Tape and Reel Information  
L6327: 3000PCS/reel  
Marking  
BSS127  
PG-SOT-23 Yes  
Sis  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
I D  
T A=25 °C  
T A=70 °C  
T A=25 °C  
I D=0.09 A,  
Continuous drain current  
0.021  
0.017  
0.09  
A
I D,pulse  
dv /dt  
V GS  
Pulsed drain current  
Reverse diode dv /dt  
Gate source voltage  
V
DS=480 V,  
di /dt =200 A/µs,  
j,max=150 °C  
6
kV/µs  
V
T
±20  
ESD class  
(JESD22-A114-HBM)  
0 (<250V)  
P tot  
T A=25 °C  
Power dissipation  
0.50  
W
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55 ... 150  
55/150/56  
°C  
Rev. 1.47  
page 1  
2010-07-29  

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