Datasheet > BSS127H6327XTSA2

BSS127H6327XTSA2

更新时间： 2024-02-16 00:09:52

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	250K
描述
Small Signal Field-Effect Transistor, 0.021A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3

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BSS127H6327XTSA2 数据手册

Type

BSS127

SIPMOS^®Small-Signal-Transistor

Features

Product Summary

V _DS

600

Ω

• n-channel

R _DS(on),max

I _D

500

• enhancement mode

0.021

• Logic level (4.5V rated)

• dv /dt rated

PG-SOT-23

• 100%lead-free; RoHS compliant

• Qualified according to AEC Q101

• Halogen-free according to IEC61249-2-21

Type

Package

Pb-free

Halogen-free Tape and Reel Information

Yes H6327: 3000PCS/reel

Marking

BSS127

PG-SOT-23 Yes

SIs

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

T _A=25 °C

T _A=70 °C

T _A=25 °C

I _D=0.021 A,

Continuous drain current

0.021

0.017

0.09

I _D,pulse

dv /dt

V _GS

Pulsed drain current

_DS=480 V,

di /dt =200 A/µs,

_j,max=150 °C

Reverse diode dv /dt

kV/µs

Gate source voltage

±20

ESD class (JESD22-A114-HBM)

Power dissipation

0 (<250)

0.50

P _tot

T _A=25 °C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... 150

55/150/56

°C

Rev. 2.01

page 1

2010-05-07

12 3 4 5 6 7...9

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