Datasheet > BSS127G-AE2-R

BSS127G-AE2-R

更新时间： 2024-01-02 10:34:32

品牌	Logo	应用领域
友顺 - UTC		/
页数	文件大小	规格书
4页	228K
描述
Small Signal Bipolar Transistor

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

BSS127G-AE2-R 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.68
Base Number Matches：	1

BSS127G-AE2-R 数据手册

UNISONIC TECHNOLOGIES CO., LTD

BSS127

Power MOSFET

0.021A, 600V ENHANCEMENT

N-CHANNEL MOSFET



DESCRIPTION

The UTC BSS127 is an enhancement N-channel mode Power

FET, it uses UTC’s advanced technology to provide customers ultra

high switching speed and ultra low gate charge.



FEATURES

* R_DS(ON)< 600Ω @ V_GS= 4.5V, I_D=0.016A

_DS(ON)< 500Ω @ V_GS=10V, I_D=0.016A

* Ultra Low Gate Charge (Typical 140nC)

* Ultra High Switching Speed



SYMBOL

 ORDERING INFORMATION

Pin Assignment

Ordering Number

Package

Packing

BSS127G-AE2-R

BSS127G-AE3-R

SOT-23-3

SOT-23

Tape Reel

Note: Pin Assignment: G: Gate

D: Drain

S: Source

 MARKING

SC7G

www.unisonic.com.tw

1 of 4

QW-R502-824.E

12 3 4

中文翻译

下载PDF

与BSS127G-AE2-R相关器件

型号	品牌	获取价格	描述	数据表
BSS127G-AE3-R	UTC	获取价格	0.021A, 600V SMALL-SIGNAL-TRANSISTOR
BSS127H6327	INFINEON	获取价格	Small Signal Field-Effect Transistor, 0.021A I(D), 600V, 1-Element, N-Channel, Silicon, Me
BSS127H6327XTSA2	INFINEON	获取价格	Small Signal Field-Effect Transistor, 0.021A I(D), 600V, 1-Element, N-Channel, Silicon, Me
BSS127I	INFINEON	获取价格	N-沟道增强模式 MOSFET BSS127I 采用 SOT-23-3 封装，其特性为 V
BSS127L6327	INFINEON	获取价格	Small Signal Field-Effect Transistor, 0.021A I(D), 600V, 1-Element, N-Channel, Silicon, Me
BSS127L6327HTSA1	INFINEON	获取价格	Small Signal Field-Effect Transistor, 0.021A I(D), 600V, 1-Element, N-Channel, Silicon, Me
BSS127L-AE2-R	UTC	获取价格	Small Signal Bipolar Transistor
BSS127L-AE3-R	UTC	获取价格	0.021A, 600V SMALL-SIGNAL-TRANSISTOR
BSS127S	DIODES	获取价格	N-CHANNEL ENHANCEMENT MODE MOSFET
BSS127S-7	DIODES	获取价格	Small Signal Field-Effect Transistor, 0.07A I(D), 600V, 1-Element, N-Channel, Silicon, Met