是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 1.55 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 600 V |
最大漏极电流 (Abs) (ID): | 0.07 A | 最大漏极电流 (ID): | 0.07 A |
最大漏源导通电阻: | 190 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G3 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 1.25 W | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 40 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSS127SSN | DIODES |
获取价格 |
N-CHANNEL ENHANCEMENT MODE FIELD MOSFET |
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BSS127V | RECTRON |
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Small Signal Field-Effect Transistor, |
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BSS127ZG-AE3-R | UTC |
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Small Signal Field-Effect Transistor, |
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BSS127ZL-AE3-R | UTC |
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Small Signal Field-Effect Transistor, |
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BSS129 | INFINEON |
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SIPMOS Small-Signal Transistor(N channel Depletion mode High dynamic resistance) |
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BSS129E6296 | INFINEON |
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Small Signal Field-Effect Transistor, 0.15A I(D), 240V, 1-Element, N-Channel, Silicon, Met |
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BSS129E-6325 | INFINEON |
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Small Signal Field-Effect Transistor, 0.15A I(D), 240V, 1-Element, N-Channel, Silicon, Met |
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BSS129L-18 | VISHAY |
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Small Signal Field-Effect Transistor, 0.15A I(D), 230V, 1-Element, N-Channel, Silicon, Met |
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BSS129Q62702-S15 | ETC |
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TRANSISTOR MOSFET TO 92 E LINE TO 237 |
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BSS129-TR1 | VISHAY |
获取价格 |
TRANSISTOR 150 mA, 230 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, TO-92-18CD, 3 PIN, F |
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