Datasheet > BSS127V

BSS127V

更新时间： 2024-02-18 03:08:16

品牌	Logo	应用领域
RECTRON		/
页数	文件大小	规格书
7页	207K
描述
Small Signal Field-Effect Transistor,

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中文翻译

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技术参数
数据手册

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BSS127V 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.6
Base Number Matches：	1

BSS127V 数据手册

BSS127

N-Channel Enhancement Mode Power MOSFET

Description

This new generation uses advanced planar technology MOSFET,

provide excellent high voltage and fast switching, making it ideal for

small-signal and level shift applications.

Features

Schematic diagram

Marking and pin assignment

SOT-23 top view

Low Input Capacitance

High BVDSS Rating for Power Application

Low Input/Output Leakage

Application

Motor Control

DC-DC Converters

Power management

Backlighting

Halogen-free

P/N suffix V means AEC-Q101 qualifiedꢀ e.g:BSS1±7V

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

BSS1±7

SOT-±3

Ø180mm

8 mm

3000 units

Absolute Maximum Ratings (T_A=25 unless otherwise noted)

Parameter

Symbol

V^DS

Limit

600

Unit

Drain-Source Voltage

Gate-Source Voltage

±±0

V^GS

T_A=±5

T_A=70

0.0±1

0.017

0.09

I_D

Continuous Drain Current

Drain Current -Pulsed (Note 1)

Maximum Power Dissipation

I_DM

P_D

0.5

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient (Note ±)

±50

±019-01/8±/43

REV:/

12 3 4 5 6 7

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