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BSS127L6327

更新时间: 2024-02-10 03:57:37
品牌 Logo 应用领域
英飞凌 - INFINEON 光电二极管晶体管
页数 文件大小 规格书
9页 248K
描述
Small Signal Field-Effect Transistor, 0.021A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3

BSS127L6327 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.22
其他特性:LOGIC LEVEL COMPATIBLE配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (Abs) (ID):0.021 A
最大漏极电流 (ID):0.021 A最大漏源导通电阻:600 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):1.5 pF
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.5 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管元件材料:SILICONBase Number Matches:1

BSS127L6327 数据手册

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BSS127  
SIPMOS® Small-Signal-Transistor  
Features  
Product Summary  
V DS  
600  
V
A
• n-channel  
R DS(on),max  
I D  
500  
• enhancement mode  
0.021  
• Logic level (4.5V rated)  
• dv /dt rated  
• Qualified according to AEC Q101  
• 100%lead-free; RoHS compliant  
PG-SOT-23  
Type  
Package  
Pb-free  
Tape and Reel Information  
L6327: 3000PCS/reel  
Marking  
BSS127  
PG-SOT-23 Yes  
SI  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
I D  
T A=25 °C  
T A=70 °C  
T A=25 °C  
I D=0.09 A,  
Continuous drain current  
0.021  
0.017  
0.09  
A
I D,pulse  
dv /dt  
V GS  
Pulsed drain current  
Reverse diode dv /dt  
Gate source voltage  
V
DS=480 V,  
di /dt =200 A/µs,  
j,max=150 °C  
6
kV/µs  
V
T
±20  
ESD class  
(JESD22-A114-HBM)  
0 (<250V)  
P tot  
T A=25 °C  
Power dissipation  
0.50  
W
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55 ... 150  
55/150/56  
°C  
Rev. 1.46  
page 1  
2010-05-07  

BSS127L6327 替代型号

型号 品牌 替代类型 描述 数据表
BSS127H6327 INFINEON

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