是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | SOT-223 |
包装说明: | SOP, | 针数: | 4 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8542.39.00.01 | 风险等级: | 5.61 |
内置保护: | OVER CURRENT; OVER VOLTAGE; UNDER VOLTAGE; TRANSIENT | 接口集成电路类型: | BUFFER OR INVERTER BASED PERIPHERAL DRIVER |
JESD-30 代码: | R-PDSO-G4 | 长度: | 6.5 mm |
功能数量: | 1 | 端子数量: | 4 |
输出电流流向: | SINK | 标称输出峰值电流: | 0.7 A |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | SOP |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 认证状态: | Not Qualified |
座面最大高度: | 1.8 mm | 最大供电电压: | 34 V |
最小供电电压: | 5 V | 标称供电电压: | 13.5 V |
表面贴装: | YES | 技术: | MOS |
端子形式: | GULL WING | 端子节距: | 2.3 mm |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
断开时间: | 150 µs | 接通时间: | 100 µs |
宽度: | 3.5 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BSP50 | FAIRCHILD |
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NPN Darlington Transistor | |
BSP50 | NXP |
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NPN Darlington transistors | |
BSP50 | INFINEON |
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NPN Silicon Darlington Transistors (High collector current Low collector-emitter saturatio | |
BSP50 | YAGEO |
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Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon | |
BSP50 | ONSEMI |
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NPN达林顿晶体管 | |
BSP50 | NEXPERIA |
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NPN Darlington transistorProduction | |
BSP50,115 | NXP |
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BSP50; BSP51; BSP52 - NPN Darlington transistors SC-73 4-Pin | |
BSP50_07 | INFINEON |
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NPN Silicon Darlington Transistors | |
BSP50BSP52 | INFINEON |
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NPN Silicon Darlington Transistors (High collector current Low collector-emitter saturatio | |
BSP50E6327 | INFINEON |
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Small Signal Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, |