Datasheet > BSP51-Q

BSP51-Q

更新时间： 2024-11-30 11:12:31

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
9页	197K
描述
NPN Darlington transistorProduction

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BSP51-Q 数据手册

BSP51-Q

NPN Darlington transistor

24 May 2023

Product data sheet

1. General description

NPN Darlington transistor in an SOT223 Surface-Mounted Device (SMD) plastic package.

PNP complement: BSP61

2. Features and benefits

•

High current of 1 A

•

Low voltage of 60 V

Integrated diode and resistor

Qualified according to AEC-Q101 and recommended for use in automotive applications

3. Applications

•

Industrial high gain amplification

4. Quick reference data

Table 1. Quick reference data

Symbol

V_CBO

Parameter

Conditions

Min

Typ

Max

Unit

collector-base voltage open emitter

V_CES

collector-emitter

voltage

base short-circuited to emitter

I_C

collector current

I_CM

h_FE

peak collector current

DC current gain

V_CE= 10 V; I_C= 150 mA

[1]

1000

[1] Pulse test: t_p≤ 300 μs; δ ≤ 0.02.

5. Pinning information

Table 2. Pinning information

Symbol

Description

base

Simplified outline

Graphic symbol

collector

emitter

collector

SC-73 (SOT223)

aaa-027580

12 3 4 5 6 7...9

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