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BSP52

更新时间： 2024-11-30 11:12:35

品牌	Logo	应用领域
安世 - NEXPERIA		光电二极管晶体管
页数	文件大小	规格书
10页	190K
描述
NPN Darlington transistorProduction

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BSP52 数据手册

BSP52

NPN Darlington transistor

23 February 2018

Product data sheet

1. General description

NPN Darlington transistor in an SOT223 plastic package.

PNP complement: BSP62

2. Features and benefits

•

High current of 1 A

•

Low voltage of 80 V

Integrated diode and resistor

AEC-Q101 qualified

3. Applications

•

Industrial high gain amplification

4. Quick reference data

Table 1. Quick reference data

Symbol

V_CBO

Parameter

Conditions

Min

Typ

Max

Unit

collector-base voltage open emitter

V_CES

collector-emitter

voltage

base short-circuited to emitter

I_C

collector current

I_CM

h_FE

peak collector current

DC current gain

V_CE= 10 V; I_C= 150 mA

[1]

1000

[1] Pulse test: t_p≤ 300 μs; δ ≤ 0.02.

12 3 4 5 6 7...10

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