Datasheet > BSP50BSP52

BSP50BSP52

更新时间： 2024-11-26 22:39:39

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管达林顿晶体管
页数	文件大小	规格书
5页	156K
描述
NPN Silicon Darlington Transistors (High collector current Low collector-emitter saturation voltage)

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数据手册

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BSP50BSP52 数据手册

NPN Silicon Darlington Transistors

BSP 50

… BSP 52

● High collector current

● Low collector-emitter saturation voltage

● Complementary types: BSP 60 … BSP 62 (PNP)

Package¹⁾

Type

Marking

Ordering Code

(tape and reel)

Pin Configuration

BSP 50

BSP 51

BSP 52

BSP 50

BSP 51

BSP 52

Q62702-P1163

Q62702-P1164

Q62702-P1165

SOT-223

Maximum Ratings

Parameter

Symbol

Values

BSP 50 BSP 51 BSP 52

Unit

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

CER

CB0

EB0

100

Peak collector current

Base current

0.1

1.5

150

Total power dissipation, T

= 124 ˚C

tot

Junction temperature

˚C

Storage temperature range

stg

– 65 … + 150

Thermal Resistance

Junction - ambient²⁾

th JA

th JS

≤ 72

≤ 17

K/W

Junction - soldering point

For detailed information see chapter Package Outlines.

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm²Cu.

5.91

Semiconductor Group

12 3 4 5

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