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BSP51H6327XTSA1 PDF预览

BSP51H6327XTSA1

更新时间: 2024-11-28 04:13:27
品牌 Logo 应用领域
英飞凌 - INFINEON 开关光电二极管晶体管
页数 文件大小 规格书
8页 564K
描述
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SOT-223, 4 PIN

BSP51H6327XTSA1 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:8.52
外壳连接:COLLECTOR最大集电极电流 (IC):1 A
集电极-发射极最大电压:60 V配置:DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
最小直流电流增益 (hFE):2000JESD-30 代码:R-PDSO-G4
湿度敏感等级:1元件数量:1
端子数量:4封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHz最大关闭时间(toff):1500 ns
最大开启时间(吨):400 nsBase Number Matches:1

BSP51H6327XTSA1 数据手册

 浏览型号BSP51H6327XTSA1的Datasheet PDF文件第2页浏览型号BSP51H6327XTSA1的Datasheet PDF文件第3页浏览型号BSP51H6327XTSA1的Datasheet PDF文件第4页浏览型号BSP51H6327XTSA1的Datasheet PDF文件第5页浏览型号BSP51H6327XTSA1的Datasheet PDF文件第6页浏览型号BSP51H6327XTSA1的Datasheet PDF文件第7页 
BSP50-BSP52  
NPN Silicon Darlington Transistors  
High collector current  
4
3
Low collector-emitter saturation voltage  
Complementary types: BSP60 - BSP62 (PNP)  
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
2
1
Type  
Marking  
Pin Configuration  
Package  
SOT223  
SOT223  
SOT223  
BSP50  
BSP51  
BSP52  
BSP50 1=B 2=C 3=E  
BSP51 1=B 2=C 3=E  
BSP52 1=B 2=C 3=E  
4=C  
4=C  
4=C  
-
-
-
-
-
-
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
V
Collector-emitter voltage  
BSP50  
BSP51  
V
V
V
CEO  
45  
60  
80  
BSP52  
Collector-base voltage  
BSP50  
BSP51  
CBO  
EBO  
60  
80  
90  
BSP52  
5
1
Emitter-base voltage  
Collector current  
A
I
C
2
Peak collector current, t 10 ms  
I
CM  
p
100  
1.5  
mA  
W
Base current  
Total power dissipation-  
I
B
P
tot  
T 124 °C  
S
150  
°C  
Junction temperature  
Storage temperature  
T
j
T
stg  
-65 ... 150  
1
2011-10-05  

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