Datasheet > BSP16

BSP16

更新时间： 2024-11-06 06:44:23

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管高压
页数	文件大小	规格书
1页	37K
描述
PNP High-Voltage Transistor

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中文翻译

获取价格

数据手册

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BSP16 数据手册

SMD Type

Transistors

PNP High-Voltage Transistor

BSP16

SOT-223

Unit: mm

+0.2

3.50

-0.2

+0.2

-0.2

6.50

Features

+0.2

0.90

-0.2

+0.1

-0.1

3.00

High voltage (max. 350 V).

+0.3

7.00

-0.3

1 Base

2 Collector

+0.1

0.70

-0.1

3 Emitter

2.9

4.6

4 Collector

Absolute Maximum Ratings Ta = 25

Parameter

collector-base voltage (open emitter)

collector-emitter voltage (open base)

emitter-base voltage (open collector)

collector current (DC)

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

-350

Unit

-300

-6

-200

base current (DC)

I^B

-200

P^tot

1.28

total power dissipation T^amb

storage temperature

T^stg

-65 to 150

150

junction temperature

operating ambient temperature

Tamb

Rth j-a

Rth j-s

-65 to 150

thermal resistance from junction to ambient *

thermal resistance from junction to soldering point

K/W

* . Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad

for collector 1 cm².

Electrical Characteristics Ta = 25

Parameter

collector cut-off current

emitter cut-off current

DC current gain

Symbol

I^CBO

I^EBO

h^FE

Testconditons

IE = 0; VCB = -280 V

Min

Typ

Max

Unit

-100

120

-2

IC = 0; VEB = -6 V

IC = -50 mA; VCE = -10 V

IC = -50 mA; IB = -5 mA

collector-emitter saturation voltage

collector capacitance

transition frequency

V^CEsat

C^c

IE = ie = 0; VCB = -10 V; f = 1 MHz

IC = -10 mA; VCE = -10 V; f = 100 MHz

f^T

MHz

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